Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Na, Heedo; Oh, Jeong-Hoon; Lee, Kyumin; Kim, Jonggi; Lee, Sung-Hoon; Lim, Dong Hyeok; Cho, Mann‐Ho; Sohn, Hyunchul

doi:10.1016/j.mee.2013.04.025

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…Nevertheless,t he XPS spectra of Si ions and morphology of Ti-SiO x did not noticeably change after the 20 hs tability test, suggesting that Si suboxides (Si 1+ ,S i 2+ ,a nd Si 3+ )a re able to provide stable water oxidation sites and the overall reaction is steady (Supporting Information, Figure S12), which confirms the good chemical stability.The XPS spectra of Ti 2p were found as two peaks:T i 3+ 2p 1/2 at 461.06 eV and Ti 4+ 2p 3/2 at 458.08 eV. [20] Therefore,t he Ti ion-doped thin SiO x film has ah igher conductivity than the non-doped SiO x layer and facilitates the charge transfer through the Ti-SiO x layer (Supporting Information, Figure S13). [20] Therefore,t he Ti ion-doped thin SiO x film has ah igher conductivity than the non-doped SiO x layer and facilitates the charge transfer through the Ti-SiO x layer (Supporting Information, Figure S13).…”

Section: Angewandte Chemiementioning

confidence: 99%

“…[19] Them etal-ion-doped dielectric material was used as aconductive filament in the resistance random access memory device by reducing the resistivity of metal oxides through ah opping conduction mechanism and tunneling effect. [20] Therefore,t he Ti ion-doped thin SiO x film has ah igher conductivity than the non-doped SiO x layer and facilitates the charge transfer through the Ti-SiO x layer (Supporting Information, Figure S13). We also observed that doping the SiO x layer with other metal ions such as Ag and Au showed effects similar to the case of Ti doping (Supporting Information, Figure S14).…”

Section: Communicationsmentioning

confidence: 99%

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A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

et al. 2016

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This study introduces an in situ fabrication of nanoporous hematite with aT i-doped SiO x passivation layer for ah igh-performance water-splitting system. The nanoporous hematite with aT i-doped SiO x layer (Ti-(SiO x /np-Fe 2 O 3 )) has ap hotocurrent density of 2.44 mA cm À2 at 1.23 V RHE and 3.70 mA cm À2 at 1.50 V RHE .W hen ac obalt phosphate co-catalyst was applied to Ti-(SiO x /np-Fe 2 O 3 ), the photocurrent density reached 3.19 mA cm À2 at 1.23 V RHE with stability,which shows great potential of the use of the Ti-doped SiO x layer with as ynergistic effect of decreased charge recombination, the increased number of active sites,a nd the reduced hole-diffusion pathwayf rom the hematite to the electrolyte.

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Section: Angewandte Chemiementioning

confidence: 99%

Section: Communicationsmentioning

confidence: 99%

A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

et al. 2016

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“…The metal-oxide-nitride-oxide-silicon (MONOS) nonvolatile memories (NVM) are widely used as for flash memory because of the superiority in high density integration. 1,2) High-k dielectrics is effective to realize high-speed and lowvoltage operation for MONOS NVM. [3][4][5][6][7][8][9][10] We have reported the Hf-based MONOS NVM with high-k HfO 2 and HfN 1.1 dielectrics.…”

Section: Introductionmentioning

confidence: 99%

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

Ohmi¹,

Horiuchi²,

Morita³

et al. 2021

Jpn. J. Appl. Phys.

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The effect of HfN multi charge trapping layers (CTLs) on the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory characteristics was investigated to improve the threshold voltage (V TH) controllability. The Hf-based MONOS structure with HfN1.3/HfN1.1/HfN1.3/HfN1.1 4-layer CTL realized precise control of flat-band voltage (V FB) and V TH compared to the Hf-based MONOS with HfN1.1 1-layer CTL. The hysteresis width after the program operation was markedly decreased which was originated from the stable trap site formation at the interface of the multi CTL. The retention and fatigue characteristics were found to be remarkably improved for the Hf-based MONOS structure with HfN multi CTL.

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A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

et al. 2016

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This study introduces an in situ fabrication of nanoporous hematite with a Ti-doped SiOx passivation layer for a high-performance water-splitting system. The nanoporous hematite with a Ti-doped SiOx layer (Ti-(SiOx /np-Fe2 O3 )) has a photocurrent density of 2.44 mA cm(-2) at 1.23 VRHE and 3.70 mA cm(-2) at 1.50 VRHE . When a cobalt phosphate co-catalyst was applied to Ti-(SiOx /np-Fe2 O3 ), the photocurrent density reached 3.19 mA cm(-2) at 1.23 VRHE with stability, which shows great potential of the use of the Ti-doped SiOx layer with a synergistic effect of decreased charge recombination, the increased number of active sites, and the reduced hole-diffusion pathway from the hematite to the electrolyte.

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Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Cited by 3 publications

References 15 publications

A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

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Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Cited by 3 publications

References 15 publications

A Titanium‐Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

A Titanium‐Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

A Titanium‐Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

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A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

A Titanium‐Doped SiO_x Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System