HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

Abstract

The effect of HfN multi charge trapping layers (CTLs) on the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory characteristics was investigated to improve the threshold voltage (V TH) controllability. The Hf-based MONOS structure with HfN1.3/HfN1.1/HfN1.3/HfN1.1 4-layer CTL realized precise control of flat-band voltage (V FB) and V TH compared to the Hf-based MONOS with HfN1.1 1-layer CTL. The hysteresis width after the program operation was markedly decreased which was originated from the stable trap site formation at the interface of the multi CTL. The retention and fatigue characteristics were found to be remarkably improved for the Hf-based MONOS structure with HfN multi CTL.

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO₂ Blocking Layer

“…Metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memories (NVM) are widely investigated not only for storage memory but for in-memory computing applications [1,2]. Utilizing the high-k (HK) thin films in MONOS NVM is effective to reduce the operation voltage and improve the operation speed [3,4]. The memory window (MW) of MONOS NVM is necessary to be increased even when the operation voltage is decreased.…”