Effect of SiOxNy gage insulator on amorphous silicon thin-film transistors

Abstract

The effect of the plasma chemical vapor deposition SiOxNy gate insulator on the threshold voltage for amorphous thin-film transistors was investigated, using different compositions of SiOxNy. The density of trapped charges responsible for the threshold voltage shift was found to be minimum at x/y=0.58. Photoluminescence measurements reveal that the peak energy in the photoluminescence in SiOxNy layers has a maximum value at x/y=0.58. The threshold voltage (Vth) was also found to increase with further increase of x/y. The observed threshold voltage shift is qualitatively interpreted in terms of energy band at the insulator-silicon interface.

Improved stability of deuterated amorphous silicon thin film transistors

“…In order to understand how the change of the charges trapped in insulator and that of the defect state density at the SiO 2 /Si interface affects, the charge concentrations of both are calculated. From the literature, 20 the threshold voltage shift ⌬V T is in FIG. 9.…”

Estudo e produção de filmes de oxinitreto de silício (SiOxNy) pela técnica de PECVD.

“…Uma das primeiras observações da formação do oxintreto de silício (SiO x N y ) [1] ocorreu durante o processamento de substratos de silício com a técnica de oxidação local conhecida como LOCOS onde foi detectada sua característica de resistência à oxidação. Posteriormente esse material foi utilizado em dispositivos TFTs (Thin Film Transistors) por apresentar menor tensão mecânica e menor densidade de cargas armadilhadas na interface em comparação com o Si 3 N 4 [2,3] . Os…”