Effect of sintering temperature on the structural, optical and electrical properties of sol–gel derived indium oxide thin films

Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

“…(∝ ℎ ) 2 relation of dependence with the photon energy (ℎ ) is exhibited in Fig.3. The electronic transitions was found to be direct type, the values of the band gap energy are specified by extrapolation of the linear part of the curves into the (ℎ ) axis and found to be varies in range (3.8-3.86) eV for annealed films and (3.45-3.68) eV for the films before any postannealing at different thickness which is in good agreement with reported results in [9,16,17]. Conformity of the surface smoothness and it's uniform morphology for the films, are indicated in the high values of the band gap.…”

“…One of the substantial parameter that influence the films' physical properties is film thickness as its increases. The grain size increasing and the crystallinity is improving [9]. As shown in XRD spectra patterns of the films tell about their crystallinity where it can be concluded that the films showed polycrystalline nature.…”

“…It was revealed that the In2O3 thin film with 158±1.5 nm thickness and annealed at 300 ℃ and 400 ℃ gave no spotted diffraction peaks which mean it's in the amorphous state and annealing at 500 ℃ crystallize the films to cubic In2O3. Furthermore, film's oxygen deficiency increases when films are annealed [9]. Scherrer equation was used to estimate the crystallite size 125.8 nm, 94.4 nm and 16 nm for the films annealed at 500 ℃, 400 ℃ and 300 ℃, respectively as it increases with increasing annealing temperature as reported in [11] as a result of the improvement and enhancement in the films' crystallinity.…”

“…Usually, In2O3 crystallizes into a cubic bixtype structure and has a melting point temperature of 1910°C. It displays a direct band gap between (3.55 and 3.75) eV and that is highly conductive, which is an uncommon property for wide band gap material [8], in its stoichiometric state, it is an insulator but it becomes more conductive when its oxygen deficient is increasing [9]. Simple and inexpensive vacuum evaporation techniques were employed to deposit metal indium thin films, performing this technique by laser radiation heating local oxidization will be permitted of indium thin films, enabling the conductivity and transparency of thin films to be controlled [10].…”

Dependence of optical properties on the thickness of amorphous Ge30Se70 thin films

“…We have used the OJL model to determine the optical constants of evaporated a-Se films by fitting only their transmission spectra [27]. In another study, we used OJL, Drude and BEMA models to analyze the optical properties of nanocrystalline In 2 O 3 :Sn films [28], solgeldeposited In 2 O 3 films [29] and evaporated AsS films [30]. In the OJL model, the shape of the conduction and valence band DOS are mathematically defined as a function of energy, predominantly by the parameters E 0 (defining the gap between the band edges), mass (a scaling factor determining the shape of the DOS) and gamma (reflecting the width of the exponential band tails).…”