Effect of sintering temperature on the dielectric behaviour of lithium ferrite

Ravinder, D.

doi:10.1002/pssa.2211390141

Cited by 14 publications

(4 citation statements)

References 10 publications

(3 reference statements)

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“…The decrease of dielectric constant with increase of frequency as observed in the case of mixed Mn-Zn-Er ferrites is a normal dielectric behaviour. This normal dielectric behaviour was also observed by several other investigators (Chandra Prakash and Bajal 1985;Ravinder 1993;Ramana Reddy et al 1999). The normal dielectric behaviour of spinel ferrites was also explained by Rezlescu and Rezlescu (1974).…”

Section: Frequency Dependence Of Dielectric Constant (ε′)supporting

confidence: 86%

Dielectric behaviour of erbium substituted Mn-Zn ferrites

2001

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Dielectric properties such as dielectric constant (ε ε′ ′) and dielectric loss tangent (tan δ δ) of mixed Mn-Zn-Er ferrites having the compositional formula Mn0⋅ ⋅58Zn0⋅ ⋅37Fe2⋅ ⋅05-xErxO4 (where x = 0⋅ ⋅2, 0⋅ ⋅4, 0⋅ ⋅6, 0⋅ ⋅8 and 1⋅ ⋅0) were measured at room temperature in the frequency range 1-13 MHz using a HP 4192A impedance analyser. Plots of dielectric constant (ε ε′ ′) vs frequency show a normal dielectric behaviour of spinel ferrites. The frequency dependence of dielectric loss tangent (tan δ δ) was found to be abnormal, giving a peak at certain frequency for all mixed Mn-Zn-Er ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. Plots of dielectric constant vs temperature have shown a transition near the Curie temperature for all the samples of Mn-Zn-Er ferrites. However, Mn0⋅ ⋅58Zn0⋅ ⋅37Er1⋅ ⋅0Fe1⋅ ⋅05O4 does not show a transition. On the basis of these results an explanation for the dielectric mechanism in Mn-Zn-Er ferrites is suggested.

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Section: Frequency Dependence Of Dielectric Constant (ε′)supporting

confidence: 86%

Dielectric behaviour of erbium substituted Mn-Zn ferrites

2001

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“…The decrease is rapid at a lower frequency and slower and stable at the higher frequency. The decrease of dielectric constant with increasing frequency is a normal dielectric behavior which is also observed by other researchers [22][23][24][25][26][27]. This behavior may be due to the present of interfacial polarization and electron hopping takes place, [28], which exists in non-homogeneous dielectric and was explained by Koops and Maxwell-Wagner model [29][30][31].…”

Section: Resultssupporting

confidence: 65%

The effect of SiO2 addition on dielectric properties and microstructure of ZnNiO2: based ceramics

Desouky

2019

SN Appl. Sci.

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The present work attempted to investigate the effect of SiO 2 addition on the dielectric properties and microstructure of the ZnNiO 2-ceramics. The content of added SiO 2 is in the range 5-40 wt%, while that of the other additives keeps constant. The given samples were sintered at 1000-1300 °C for 120 min, with conventional ceramic processing method. By X-ray diffraction, Zinc silicate, Nickel silicate, Quartz, Nickel Zinc Oxide, Zinc Oxide and Nickel oxide were found in all the samples, and no extra phases were identified in the detection limit. Minimum water absorption was present in specimens fired at 1300 °C for 120 min. The DTA pattern shows a clear indication of five maxima happening at the point 104.1 °C, 112 °C, 109.5 °C, 106 °C, and 117.9 °C, respectively. SEM studies show that the increase of SiO 2 wt% had significant influence on grain growth and microstructural characteristics of the sintered specimens. There are agglomerated fine particles of NiO, because it has high surface tension. The electrical properties of the samples varied with the increase content of SiO 2. The capacitance (pF) and, dielectric constant (ɛ −), decrease when SiO 2 content increase and with increasing frequency whereas, conductivity increased with increase content of SiO 2 .

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“…At higher frequencies up to 200 kHz, the dielectric constant decreases gradually. From 3 MHz to 5 MHz, there is an increase in the dielectric constant due to stray capacitances [6][7][8][9][10]. The dielectric loss was also studied as a function of frequency for different temperatures and is shown in Fig.4.…”

Section: Resultsmentioning

confidence: 99%

“…Priya and R. Vasanthakumari Vol. 10,No.4 find important applications in optoelectronics such as capacitors, nonvolatile memory devices, actuators, high-performance gate insulators, etc.…”

Section: Introductionmentioning

confidence: 99%