Effect of SiN treatment on GaN epilayer quality

Abstract

High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire using a GaN buffer layer grown at 600 °C. The effect of a SiN interlayer has been investigated. We have varied the silane (SiH4) flow from 4 to 20 sccm and the duration of SiN treatment from 60 s to 180 s. These layers have been characterized in‐situ by laser reflectometry and ex‐situ by atomic force microscopy (AFM) and low‐temperature photoluminescence. AFM revealed that GaN grown with optimized SiN treatment shows a terrace‐like structure with a reduced density of dislocations of about 5 × 108 cm−2 compared to GaN without SiN treatment. The I2 line is very intense with a 4 meV full width at half maximum. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment

“…The SiN treatment of the sapphire substrate for GaN growth induces spectacular changes on the in situ monitored reflectance signal [1][2][3][4][5]. Different growth modes are observed.…”

Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements

“…More details of the growth process and the optimum growth conditions have been reported elsewhere. [12][13][14] Ex situ reflectivity measurements were performed at room temperature in air for all samples. Polychromatic light from a halogen lamp was used as the light source.…”

GaN property evolution at all stages of MOVPE Si/N treatment growth

“…After a temperature ramp from 600 to 1120 °C, GaN epilayer was finally grow. Details of the growth process and optimum growth conditions were reported elsewhere [6,7]. The growth was monitored in situ by laser reflectometry (λ = 632.8 nm).…”

“…The advantages of this process are well established and it can be an alternative to the epitaxial lateral overgrowth (ELO) technology which needs more complicated and expensive ex situ steps. Many studied were devoted to the optimization of the SiN treatment growth parameters essentially the treatment duration and the SiH 4 flow rate [5][6][7][8][9]. However, the evolution of the GaN layers properties at all the stages of the SiN treatment process is not well described.…”