Effect of Si doping on the structure and optical properties of Ge2Sb2Te5 studied by ab initio calculations

Recent advances in doped Ge2Sb2Te5 thin film based phase change memories

“…On the other hand, in simulation studies for Si-doped GST thin films, it was observed that Si dopant increased the binding energy between the atoms by increasing the total coordination number due to its comparable size to host constituent atoms (Ge, Sb, Te). This increased coordination between atoms slowed down the diffusion of atoms which in turn retarded the crystallization process 87,88 . Doping of chalcogen elements (O, S, Se, Te) into GST thin films was reported to stabilize the amorphous phase and improve the overwrite cyclability of GST thin films.…”

“…This increased coordination between atoms slowed down the diffusion of atoms which in turn retarded the crystallization process. 87,88 Doping of chalcogen (O, S, Se, Te) into GST thin films were reported to stabilize the amorphous phase and improve the overwrite cyclability of GST thin films. As oxides like GeO 2 , Sb 2 O 3 , and TeO 2 are generally predicted to have a high T m value, so motivated by this, researchers doped O in GST to suppress data flow during switching between distinct phases and to enhance the data overwriting property.…”

“…This increased coordination between atoms slowed down the diffusion of atoms which in turn retarded the crystallization process. 87,88…”

“…In order to strengthen the properties of GST thin films, various elements from p-block and d-block were doped in GST. The incorporation of transition metal (TM) elements (W, 42,43 Cu, 44,45 Ti, 46–49 Zn, 50 Cr, 51 Ag, 18,39,52–55 Ru, 56 and Ni 57 ) and p-block elements (Se, 58 As, 59 Sn, 41,60 N, 61–67 C, 68–70 Ge, 71 Al, 72,73 O, 66,74,75 In, 76–78 Ga, 79 Sb, 80–84 and Si 85–90 ) into the GST host matrix is reported to significantly tailor its properties which can find applications in various technological applications.…”

“…In order to strengthen the properties of GST thin films, various elements from p-block and d-block were doped in GST. The incorporation of transition metal (TM) elements (W 42,43 , Cu 44,45 , Ti [46][47][48][49] , Zn 50 , Cr 51 , Ag 18,39,[52][53][54][55] , Ru 56 , and Ni 57 ) and p-block elements (Se 58 , As 59 , Sn 41,60 , N [61][62][63][64][65][66][67] , C [68][69][70] , Ge 71 , Al 72,73 , O 66,74,75 , In [76][77][78] , Ga 79 , Sb [80][81][82][83][84] , and Si [85][86][87]…”