Ga doping induced structural and optical modification in $$\hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5}$$ thin films

Recent advances in doped Ge2Sb2Te5 thin film based phase change memories

“…In order to strengthen the properties of GST thin films, various elements from p-block and d-block were doped in GST. The incorporation of transition metal (TM) elements (W, 42,43 Cu, 44,45 Ti, 46–49 Zn, 50 Cr, 51 Ag, 18,39,52–55 Ru, 56 and Ni 57 ) and p-block elements (Se, 58 As, 59 Sn, 41,60 N, 61–67 C, 68–70 Ge, 71 Al, 72,73 O, 66,74,75 In, 76–78 Ga, 79 Sb, 80–84 and Si 85–90 ) into the GST host matrix is reported to significantly tailor its properties which can find applications in various technological applications.…”

“…In order to strengthen the properties of GST thin films, various elements from p-block and d-block were doped in GST. The incorporation of transition metal (TM) elements (W 42,43 , Cu 44,45 , Ti [46][47][48][49] , Zn 50 , Cr 51 , Ag 18,39,[52][53][54][55] , Ru 56 , and Ni 57 ) and p-block elements (Se 58 , As 59 , Sn 41,60 , N [61][62][63][64][65][66][67] , C [68][69][70] , Ge 71 , Al 72,73 , O 66,74,75 , In [76][77][78] , Ga 79 , Sb [80][81][82][83][84] , and Si [85][86][87]…”