Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Hassanien, Ahmed Saeed; Akl, Alaa A.

doi:10.1016/j.spmi.2015.10.044

Cited by 569 publications

(208 citation statements)

References 66 publications

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“…Under short circuit current condition (V = 0), the highest recombination occurs at the electrode interfaces due to the charge carrier accumulation as it is shown in Figure 3 (b) leading to lower diffusion length at these positions as shown in Figure 3 According to Eqs. [25,31] It may be noted that for calculating such temperature dependent L D , the temperature dependent recombination rates as given in Eqs. For investigating the influence of temperature on the diffusion length, we have simulated the diffusion length L D in Eq.…”

Section: Resultsmentioning

confidence: 99%

Influence of Urbach Energy, Temperature, and Longitudinal Position in the Active Layer on Carrier Diffusion Length in Perovskite Solar Cells

Mehdizadeh‐Rad

Singh

2019

ChemPhysChem

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The diffusion length of charge carriers in the active layer of a perovskite solar cell (PSC) of the structure Glass/PEDOT: PSS/ CH 3 NH 3 PbI 3 /PC60BM/Al is modelled. It is found that the diffusion length depends on the position x in the active layer measured from the PEDOT: PSS interface, Urbach energy and temperature. By varying the voltage in the range from zero to V oc , it is shown that the dependence of diffusion length on the position x in the active layer reduces at higher voltage. The combined influence of applied voltage and temperature on the diffusion length of charge carriers is investigated and it is found that in the low voltage range the diffusion length is temper-ature independent, but it becomes significantly temperature dependent at higher voltages. Also, it is found that the diffusion length decreases as the applied voltage increases and this reduction becomes much more significant at higher voltage and temperatures. The combined influence of applied voltage and Urbach energy on diffusion length of charge carriers reveals that the diffusion length decreases when both the applied voltage and Urbach energy increase. However, the reduction in the diffusion length due to the increase in Urbach energy becomes less significant at higher voltage.

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Section: Resultsmentioning

confidence: 99%

Influence of Urbach Energy, Temperature, and Longitudinal Position in the Active Layer on Carrier Diffusion Length in Perovskite Solar Cells

Mehdizadeh‐Rad

Singh

2019

ChemPhysChem

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“…Vacuum evaporation technique is the simplest technique used to prepare amorphous thin films especially chalcogenide films such as CdSSe [1], MnS [2], Ge-Te-Ga [3], and so on. In general, chalcogenide materials can be used for memory-switching applications [4,5], phase-change materials [6,7], and solar applications [8].…”

Section: Vacuum Thermal Evaporation Techniquementioning

confidence: 99%

Advance Deposition Techniques for Thin Film and Coating

Jilani¹,

Abdel-wahab²,

HosnyHammad³

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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Thin films have a great impact on the modern era of technology. Thin films are considered as backbone for advanced applications in the various fields such as optical devices, environmental applications, telecommunications devices, energy storage devices, and so on . The crucial issue for all applications of thin films depends on their morphology and the stability. The morphology of the thin films strongly hinges on deposition techniques. Thin films can be deposited by the physical and chemical routes. In this chapter, we discuss some advance techniques and principles of thin-film depositions. The vacuum thermal evaporation technique, electron beam evaporation, pulsed-layer deposition, direct current/radio frequency magnetron sputtering, and chemical route deposition systems will be discussed in detail.

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“…It has a Ni-filter and provides a angles were ranged from 4 o to 90 o . These operating parameters allowed to proper examine the samples and detect all possible diffraction peaks [17,26].…”

Section: Structural Investigationmentioning

confidence: 99%

“…It should also be noted here that the nonlinear refractive index (n 2 ) can be determined for each of the crystalline and non-crystalline materials both [54][55][56]. The numerical values of (n 2 ) can be estimated from equation (26). Obviously, the calculated values of (n 2 ) decreased together with increasing annealing power because (n 2 ) is inversely proportional to and E g is increased by increasing the power of the pulsed laser annealing.…”

Section: Nonlinear Optical Analysis and Optical Electronegativitymentioning

confidence: 99%

Study of optical properties of thermally evaporated ZnSe thin films annealed at different pulsed laser powers

Hassanien

Aly

Akl

2016

Journal of Alloys and Compounds

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164

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Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Cited by 569 publications

References 66 publications

Influence of Urbach Energy, Temperature, and Longitudinal Position in the Active Layer on Carrier Diffusion Length in Perovskite Solar Cells

Influence of Urbach Energy, Temperature, and Longitudinal Position in the Active Layer on Carrier Diffusion Length in Perovskite Solar Cells

Advance Deposition Techniques for Thin Film and Coating

Study of optical properties of thermally evaporated ZnSe thin films annealed at different pulsed laser powers

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