Study of optical properties of thermally evaporated ZnSe thin films annealed at different pulsed laser powers

Hassanien, Ahmed Saeed; Aly, K.A.; Akl, Alaa A.

doi:10.1016/j.jallcom.2016.06.180

Cited by 171 publications

(47 citation statements)

References 53 publications

(114 reference statements)

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“…The synthesis of binary metal chalcogenide of group A II -B VI semiconductors in a nanocrystalline form has been a rapidly growing area of research. This can be attributed to the importance of properties such as; non-linear optics, photoluminescence electroluminescence properties, effects of crystallite or quantum size [1]. Zinc selenide is n-type semiconducting material (A II -B VI group) with wide band gap (2.7 eV) at room temperature [2].…”

Section: Introductionmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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Section: Introductionmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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“…Furthermore, with the standard relation between the current response tensor and the conductivity tensor, 15) and with the Cartesian Green function defined in Eq. (2.38), the Universal Response Relations can also be written as…”

Section: Universal Response Relationsmentioning

confidence: 99%

“…(2.50). For this purpose, one eliminates the current density via Ohm's law in terms of the proper conductivity tensor, 15) and similarly the charge density by means of the continuity equation,…”

Section: Electric Fieldmentioning

confidence: 99%

“…(2.41)-(2.42) it follows that the full Cartesian Green function is given in the isotropic limit by 15) with the scalar coefficient functions…”

Section: Longitudinal and Transverse Response Functionsmentioning

confidence: 99%

“…19]). On the theoretical side, wave equations in media allow one to relate the speed of light in materials and hence the refractive index to electromagnetic response properties such as the dielectric function [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Linear electromagnetic wave equations in materials

Starke¹,

Schober²

2017

Photonics and Nanostructures - Fundamentals and Applications

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Influence of Annealing Temperature Modulation on the Structural and Optical Properties of ZnSe Thin Films

Yuan

Liu

et al. 2021

Crystal Research and Technology

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The research work is devoted to study the influence of annealing temperature on the structural and optical properties of ZnSe thin films. The samples are prepared by a thermal evaporation technique and part of the as-deposited films are annealed. X-ray diffraction patterns and Raman spectra analysis reveal that the ZnSe thin films have cubic zinc-blende crystal structure and the crystallinity increases as the annealing temperature increases. For the linear optical parameters, the absorption edge moves to shorter wavelengths with the increase of annealing temperature. Based on Swanepoel's method, the refractive index, film thickness, absorption coefficient and optical band gap are determined. The values of band gap are found to increase from 2.63 to 2.68 eV as the annealing temperature increases. By performing an open aperture Z-scan technique with femtosecond pulses under 800 nm wavelength, all ZnSe samples show two-photon absorption responses. It is found that the modulation depth and the two-photon absorption coefficient decrease with increasing annealing temperature. Moreover, all samples exhibit better optical limiting responses at higher incident power intensities. These novel properties render this a promising material for traditional optoelectronic devices and optical limiters.

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Study of optical properties of thermally evaporated ZnSe thin films annealed at different pulsed laser powers

Cited by 171 publications

References 53 publications

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Linear electromagnetic wave equations in materials

Influence of Annealing Temperature Modulation on the Structural and Optical Properties of ZnSe Thin Films

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