Effect of scattering of sputtered atoms on the growth rate of films fabricated by magnetron sputtering

Mitin, D. M.; Serdobintsev, Alexey A.

doi:10.1134/s1063785017090073

Cited by 15 publications

(4 citation statements)

References 9 publications

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“…Ultimately thin film growth rate indirectly depends upon energy of working gas ions, sputtering coefficient and sputtering rate. These parameters are contributing to enhance performance optimizing design with respect scattering of sputtered atoms and reducing total working pressure in sputtering deposition process [48]. It is confirmed after total pressure variation study, Deposition rates drastically goes down if there is small variation or increment on total pressure flow rate.…”

Section: Optimization Of Total Pressurementioning

confidence: 74%

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Fabrication of Mg/Al2O3 Nanolaminates using DC/PDC Magnetron Sputtering to Evaluate the Effect of Oxygen Content and Total Pressure for Deposition of Thin-Films

Deshmukh¹,

Shendokar²,

Sankar³

2023

Global J. Eng. Technol. Adv.

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Thin films have always shown high sensitivity to its deposition parameters and surface morphology. Magnetron sputtering is known for its high level of consistency in deposition and repeatability. In this study Mg/Al2O3 nanolaminates in a range of 10 to 40 nm were synthesized using Direct current and Pulsed DC sputtering techniques at room temperature on glass substrates and silicon substrate using different oxygen flow rates and varying total pressure conditions to understand its effect on deposition rates and roughness of thin films. It is observed that more power and resources consumed for higher deposition time. Roughness of the film is very sensitive for certain applications like corrosion, Lenses, Implants. Scanning electron microscopy (SEM), Atomic force microscopy (AFM) were used to characterize the morphology, structure of the thin films. Optical microscopy and X-ray reflectometry (XRD-XRR) techniques confirmed the optical density and thickness of the nanolaminates respectively. It is confirmed that as total pressure and oxygen flow rate rises deposition rate significantly goes down, that impacts deposition time and roughness of thin films.

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Section: Optimization Of Total Pressurementioning

confidence: 74%

“…Total pressure of the magnetron sputtering system is responsible for evaluating the performance and transport mechanism of sputtering process [48]. This pressure not limited to purity and quality of thin films but also important factor or parameter in transport process of sputtered parameters [49].…”

Section: Optimization Of Total Pressurementioning

confidence: 99%

Fabrication of Mg/Al2O3 Nanolaminates using DC/PDC Magnetron Sputtering to Evaluate the Effect of Oxygen Content and Total Pressure for Deposition of Thin-Films

Deshmukh¹,

Shendokar²,

Sankar³

2023

Global J. Eng. Technol. Adv.

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show abstract

“…Ar gas pressure in the chamber during sputtering was 3 x 10 -4 mbar. At this Ar gas pressure mean free path of sputtered atoms is ~180 mm [22], which is comparable to the target to substrate distance. The fact that, i) target to substrate distance is an order of magnitude larger than the source size, and ii) mean free path of the sputtered atoms is comparable to the target to substrate distance, ensures that the directionality of the sputtered atoms reaching the substrate is well defined.…”

Section: Methodsmentioning

confidence: 95%

Study of magnetic nanowires of amorphous Co20Fe60B20 prepared by oblique angle deposition on nanorippled substrate

Bukharia

Karmakar

Pandit³

et al. 2021

Journal of Magnetism and Magnetic Materials

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“…Silicon films (thickness of 1 μm as measured by means of electron microscopy) were deposited by DC magnetron sputtering using 99.999% Si target upon 1 mm thick glass slides at 150 °C following previously published protocol . On top of it, 300 nm thick Ni coating was deposited by the same method.…”

Section: Methodsmentioning

confidence: 99%

Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

Serdobintsev

Kozhevnikov

Starodubov

et al. 2019

Physica Status Solidi (a)

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Technology for thin polycrystalline silicon films preparation is crucial for development of novel semiconductor devices, including flexible electronics. A method for thin polycrystalline silicon film preparation utilizing deposited nickel absorption layer which allows use of inexpensive 1064 nm pulsed YAG: Nd laser for laser annealing of magnetron-sputtered amorphous silicon is reported here. Film morphology changes are visualized with scanning electron microscopy, its chemical composition and Ni fate upon laser irradiation are studied using X-ray energy dispersion analysis and secondary ion mass spectrometry. Silicon crystalline structure changes and its homogeneity are characterized using Raman spectroscopy utilizing mapped spectral measurements. Range of laser radiation energy fluence (J cm À2 ) is established which allowed for preparation of fully polycrystalline silicon film with crystalline silicon Raman peak position and width comparable to that of single-crystalline material. Nickel film is found to ablate substantially upon irradiation, leaving remains that can be easily removed by chemical etching.

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Effect of scattering of sputtered atoms on the growth rate of films fabricated by magnetron sputtering

Cited by 15 publications

References 9 publications

Fabrication of Mg/Al2O3 Nanolaminates using DC/PDC Magnetron Sputtering to Evaluate the Effect of Oxygen Content and Total Pressure for Deposition of Thin-Films

Fabrication of Mg/Al2O3 Nanolaminates using DC/PDC Magnetron Sputtering to Evaluate the Effect of Oxygen Content and Total Pressure for Deposition of Thin-Films

Study of magnetic nanowires of amorphous Co20Fe60B20 prepared by oblique angle deposition on nanorippled substrate

Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

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