Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

“…In addition, IL scavenging induced during post-metallization annealing (PMA) improves endurance and retention characteristics by reducing interfacial trap density. [22,27] Finally, we achieved FeFETs capable of low operating voltage (1.5 V) and immediate read-after-write operation (100 ns) with high endurance (>10 8 cycles) and retention (extrapolated 10 years) characteristics. We believe that our strategies of HZO thickness scaling, EBI treatment, and IL scavenging are promising for improving the performance of FeFETs.…”

“…[25] The decrease in IL thickness and increase in the dielectric constant of IL, which alleviated voltage drop and electrical stress, can also mitigate charge trapping and depolarization field. [22,26] Methods of forming a high-quality interface using direct [12] and remote [21,27] scavenging that can reduce charge trapping are also proposed.…”