Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1−xSbx

Bhattacharya, Sriparna; Pope, A. L.; Littleton, R. T.; Tritt, Terry M.; Ponnambalam, V.; Xia, Yingjie; Poon, S. J.

doi:10.1063/1.1318237

Cited by 199 publications

(113 citation statements)

References 19 publications

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“…These compounds can easily be doped with other elements, and thus the band structure can be changed. For NiTi(Sn,Sb) materials, power factors 2 ( ) S σ up to 70 μW/cm K 2 at 650 K can be reached [44]. Nevertheless, due to the comparatively high thermal conductivity of about 10 μW/mK, a figure of merit of only 0. showed a possibility to create n-and p-type thermoelectric materials with significantly high power factors and ZTs within a single Heusler compound.…”

Section: Heusler Compounds For Thermoelectricsmentioning

confidence: 99%

Topological insulators and thermoelectric materials

Müchler

Casper

Yan

et al. 2012

Physica Rapid Research Ltrs

180

130

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Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes were both good thermoelectric properties and topological insulators can be found.Comment: Phys. Status Solidi RRL, accepte

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Section: Heusler Compounds For Thermoelectricsmentioning

confidence: 99%

Topological insulators and thermoelectric materials

Müchler

Casper

Yan

et al. 2012

Physica Rapid Research Ltrs

180

130

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“…When compared with that of HH alloys (70 mW cm -1 K -2 near 400°C) [38], the power factor of b-Zn 4 Sb 3 is relatively low (13 mW cm -1 K -2 at 400°C). This could be one of the problems for b-Zn 4 Sb 3 as a high ZT material [49].…”

Section: B-zn 4 Sbmentioning

confidence: 91%

“…One of the advantages of using PLD to deposit SrTiO 3 thin films is that the thermodynamic dopant solubility limit of 4 9 10 20 cm 3 can be overcome [38]. The maximum ZT SrTiO 3 thin film is 0.4 at 1,000 K. Therefore, it is a potential candidate of thermoelectric material for high temperature applications, if higher ZT.…”

Section: Oxide Superlatticementioning

confidence: 98%

“…Sb-doped TiNiSn alloys have power factors of as high as 70 mW cm -1 K -2 at 650 K [38]. Despite the large power factor, However, due to the high thermal conductivity of about 10 W m -1 K -1 , their ZT is only 0.45 at 650 K. It has been reported that n-type Zr 0.5 Hf 0.5 Ni 0.8 Pd 0.2 Sn 0.99 Sb 0.01 has a high figure of merit of ZT = 0.7 at 800 K [41], while the ZT value of n-type (Zr 0.5 Hf 0.5 ) 0.5 Ti 0.5 NiSn 1-y Sb y is up to 1.4 at 700 K [40].…”

Section: Half-heusler Intermetallic Compoundsmentioning

confidence: 99%

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Waste Thermal Energy Harvesting (I): Thermoelectric Effect

Kong

Hng

et al. 2014

Waste Energy Harvesting

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Waste thermal energy (heat) is the second type of energy to be discussed. Usually, it is generated in a process by way of fuel combustion or chemical reaction, and then ''dumped'' into the environment even though it could still be reused for some useful and economic purpose. The essential quality of heat is not the amount but rather its ''value.'' The strategy of how to recover this heat depends in part on the temperature of the waste heat gases and the economics involved.Waste thermal energy is one of the largest sources of inexpensive, clean, and fuel-free energy available. The vast amount of heat that is discharged into the atmosphere everyday is one of the best sources of clean, fuel-free, and inexpensive energy. According to the US Department of Energy (DOE), up to 50 % of all fuels burned in the US goes unused into the atmosphere as waste heat is released to the atmosphere. Research indicates that the energy currently wasted by the industrial facilities in the U.S. could produce as much as 20 % of the total US electrical output with the associated 20 % reduction in greenhouse gas emissions. Various sources that can be classified as waste thermal energy (heat) with their properties are listed in Tables 4.1 , 4.2, 4.3, and 4.4 [1].Among the large quantities of waste heat that have been directly discharged into the Earth's environment, much of it is at temperatures which are too low to recover by using the conventional electrical power generators. Thermoelectric power generation, also known as thermoelectricity, has been demonstrated as a promising technology in the direct conversion of low-grade thermal energy, such as waste heat energy into electrical power. Probably, the earliest application is the utilization of waste heat from a kerosene lamp to provide thermoelectric energy to power a wireless device. Thermoelectric generators have also been used to provide small amounts electricity to remote regions, for instance, Northern Sweden, as an L. B. Kong et al., Waste Energy Harvesting, Lecture Notes in Energy 24,

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“…[23][24][25][26] These alloys have composition XYZ, where X and Y denote transition or rare earth elements and Z denotes a main group element. In particular, the RNiSn-type HH alloys, where R = Hf, Zr, and Ti, are the most investigated to date due to their thermally stable [27] and mass producibility.…”

Section: Enhanced Thermoelectric Properties Of Half-heusler Alloysmentioning

confidence: 99%

Experimental and Modeling Study of Thermoelectric Materials for High Figure of Merit

Chen¹

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Half-Heusler alloys RNiSn (R=Hf, Zr, Ti) were made by arc melting under argon atmosphere followed by the consolidation using Spark Plasma Sintering (SPS) technique. The thermoelectric properties were measured from room temperature up to 1170 K. The temperature dependences of thermoelectric properties and structures were investigated. A frequency-dependent differential effective medium (DEM) model was developed to evaluate the lattice thermal conductivity. This model was also applied to calculate the thermal conductivity of nanostructured Si and Si 80 Ge 20 systems. The calculation results were compared with the experimental data measured with timedomain thermoreflectance to investigate length scale effects on phonon wavelength, mean free path, as well as the resulting impact on the thermal conductivity.In the case of n-type Hf 0.6 Zr 0.4 NiSb 0.995 Sb 0.005 , thermoelectric properties of this composition were conducted by annealing this material near the melting point in order to improve the structural order. The reduction in the lattice strain was observed. It also led to a significant enhancement of the power factor, and thus, the figure of merit (ZT) was raised to 1.2 around 850 K without the need of nanostructures. This large increase in power factor was related to the decrease of carrier concentration and the increase of mobility. This approach can be applied to the broader class of Heusler alloys, and may lead to the improvement of their thermoelectric properties. The elemental substitution and embedment of nanoparticles in the half-Heusler matrix techniques were also investigated to achieve higher ZT. Thermoelectric properties of the substitution of Ti for (Hf, Zr) sites and the addition of nano-ZrO 2 in n-type (Hf, Zr)NiSn were measured. The thermal conductivity of the composition was significantly reduced due to the enhanced phonon At the end, to evaluate the lattice thermal conductivity, a non-gray differential effective medium (DEM) model was developed and applied to half-Heusler systems. This model not only expanded the applicability of effective medium approach from small volume fractions to the whole range of volume fraction from 0 to 1, but also accounted for the multiple scattering. Then this frequency-dependent effective medium approach was utilized to calculate the lattice thermal conductivity of nanostructured Si and Si 80 Ge 20 systems. The model accurately predicted a large reduction in the thermal conductivity of these systems measured with time-domain 4 thermoreflectance (TDTR). Then the phonon spectral analysis was conducted to investigate length scale effects, and the insight into the role of long wavelength phonons on the thermal conductivity of the nanograined Si and Si-Ge alloys was gained. It was shown that phonons with wavelength much greater than the averaged grain size would not be impacted by the grain boundary scattering. 5

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Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1−xSbx

Cited by 199 publications

References 19 publications

Topological insulators and thermoelectric materials

Topological insulators and thermoelectric materials

Waste Thermal Energy Harvesting (I): Thermoelectric Effect

Experimental and Modeling Study of Thermoelectric Materials for High Figure of Merit

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