Effect of Sb doping on thermoelectric properties of chemically deposited bismuth selenide films

Thermoelectric characterization of ion beam sputtered Sb2Te3 thin films

“…Three major diffraction peaks located at 52.67 • , 67.73 • and 77.37 • are observed and they are indexed as the reflection from the (2 0 5), (2 1 1) and (3 0 0) planes of Sb 2 Te 3 . This result demonstrates the samples are Sb 2 Te 3 thin films with a hexagonal structure belonging to the R − 3m space group [14][15][16][17][18][19][20][21][22][23]. However, the intensity of the peaks related to Sb 2 Te 3 is small.…”

Thermoelectric Properties of Indium(III)‐Doped Copper Antimony Selenide Thin Films Deposited Using a Microwave‐Assisted Technique

“…DC electrical conductivity and thermo-electromotive force (EMF) as af unction of temperature were measured by using at wo-probe method at 300-500 K. To ensure good Ohmic contact between the sample and the probe,h igh-purity silver emulsion (paste) fingers was applied to the films,a nd ac hromelalumel thermocouple was used to measure the working temperature.T he electrical conductivity was calculated from the resistance measurement by using am ultimeter (RISH Multi 15s) over the entire temperature range.T he Seebeck coefficient was calculated from the thermo EMF measurement of the film at ag iven temperature.T he Seebeck coefficient was measured by applying at emperature gradient across the film as described previously. [52] TheR Tt hermal conductivity was measured by using commercial equipment (CT meter, Te leph, France accuracy 10 À3 Wm À1 K À1 ) by sandwiching the material in between the ring probe.T he probe was constructed by using ac opper-polyimide-constantan multilayer film (0.2 mm thickness,h eating diameter 15 mm).…”

Electrical, optical and morphological properties of chemically deposited nanostructured HgS–Bi2S3 composite thin films

“…3). The initial increase in the electrical conductivity is obviously due to the decrease in the bandgap and enhanced grain structure of the material whereas the decrease in conductivity after x = 0.6 can be due to the material characteristic of HgS which may be characterized by a grain boundary-limited conduction mechanism, and hopping conduction mechanism is a characteristic of conduction in the low temperature zone [9,39]. It is also supported by SEM micrographs, for x > 0.6, the crystallites are bigger but having voids which increases intercrystalline barriers and this may be responsible for the increase in resistivity.…”

“…Particularly in the recent years, interest on the preparation and study of physical properties of ternary chalcogenide compounds for their possible applications in solar cells, light emitting diodes and non-linear optical devices has increased [4][5][6][7]. Many reports were available on chemically deposited ternary composite thin films such as Pb 1−x Fe x Se [8], Bi 2−x Sb x Se 3 [9] (CdS) x (PbS) 1−x [10], CdS-Cu x S [11], PbS-Cu x S [12], Bi 2 S 3 -Cu x S [13,14], Cd 1−x Zn x S [15][16][17][18] (CdS) x (Bi 2 S 3 ) 1−x [19], Cd 1−x Fe x S [20][21][22], and suggested their applications in the area of energy conversion and solar energy utilization due to the modification in electrical and optical properties. However, there are * Corresponding author.…”