Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering

Shiratori, Yusuke; Zulkifly, Faris Akira Bin Mohd; Nakada, Kazuyoshi; Miyajima, Shinsuke

doi:10.7567/apex.11.031301

Cited by 13 publications

(9 citation statements)

References 39 publications

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“…In our previous publications, we reported the deposition of amorphous silicon by FTS under low sputtering damage conditions. [17][18][19] FTS employs two facing sputtering targets, and the plasma is confined between the targets. This results in very low sputtering damage to the c-Si wafer.…”

Section: Introductionmentioning

confidence: 99%

Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Yamaguchi

Miyajima

2023

Jpn. J. Appl. Phys.

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Tunnel oxide passivated contact (TOPCon) structures using highly doped n-type polycrystalline silicon (poly-Si) were fabricated by using facing target sputtering and ion implantation techniques for SiH4 free fabrication process of high efficiency silicon solar cells. We investigated structural and electrical properties of the highly doped n-type poly-Si layers to optimize the ion implantation process. We also investigated the surface passivation quality of our TOPCon structure. Effective carrier lifetime of 2.01 ms and implied open circuit voltage of 704 mV was obtained for our sample annealed at 950 °C. The sample also shows low contact resistance of 3.22×10-3 Ωcm-2. Our results open the way for SiH4 free fabrication process of silicon solar cell using TOPCon structure.

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Section: Introductionmentioning

confidence: 99%

Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Yamaguchi

Miyajima

2023

Jpn. J. Appl. Phys.

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“…Thus far, we have obtained a relationship among hydrogen composition, substrate temperature, optical characteristics, and thermal durability. However, previous research in the field of solar cells has reported that the carrier lifetime of a-Si:H produced by sputtering tends to decrease owing to the plasma damage of high-energy particles [9,10]. Therefore, damage reduction by facing target sputtering (FTS), which separates the substrate from the charged particle space, is being investigated [10].…”

Section: Introductionmentioning

confidence: 99%

“…However, previous research in the field of solar cells has reported that the carrier lifetime of a-Si:H produced by sputtering tends to decrease owing to the plasma damage of high-energy particles [9,10]. Therefore, damage reduction by facing target sputtering (FTS), which separates the substrate from the charged particle space, is being investigated [10]. However, no research has been conducted on the effects of plasma damage on a-Si:H in optical film applications.…”

Section: Introductionmentioning

confidence: 99%

Substrate Potential Dependence of Optical Characteristics of a-Si:H for Shortwave Near-infrared Filter by DC and RF Sputtering

Kawamata

Itô

Nikkuni

et al. 2022

e-J. Surf. Sci. Nanotechnol.

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In this study, the substrate potential dependence of the film structures and optical characteristics of hydrogenated amorphous silicon (a-Si:H) prepared by reactive sputtering was investigated for application in short-wave near-infrared band pass filters (BPFs). During direct current (DC) sputtering, the substrate was charged to a negative potential, which was further increased by applying an RF bias. When the negative potential was large owing to the bias, the surface of the film became smooth owing to the ion bombardment. However, the refractive indices of the films decreased as the Si−H2 bonds increased. When radio frequency (RF) sputtering was used, the acceleration voltage of the ions decreased to 1/3; thus, structural relaxation was promoted. Consequently, a-Si:H with a high refractive index, low optical absorption, and high thermal durability, which are suitable for a narrow BPF, was obtained. The deterioration after annealing of the characteristics of the BPF using a-Si:H prepared by RF sputtering was reduced by half compared with DC sputtering.

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“…Sputter deposition has been one of the most widely adopted thin-film deposition techniques due to advantages like largearea homogeneous film deposition, no involvement of hazardous gases, and a relatively low-cost process. A few research groups have reported the application of sputter-deposited intrinsic a-Si:H (S-i-a-Si:H) layers for c-Si surface passivation [7][8][9]. Zhang et al [8] demonstrated c-Si surface passivation by S-i-a-Si:H layers, and highlighted the c-Si surface damage during the sputtering process.…”

Section: Introductionmentioning

confidence: 99%

“…Zhang et al [8] demonstrated c-Si surface passivation by S-i-a-Si:H layers, and highlighted the c-Si surface damage during the sputtering process. Shiratori et al [9] adopted a facing target sputtering system for S-i-a-Si:H layer deposition; this entirely different configuration minimized the c-Si surface damage by avoiding direct plasma exposure. In addition to this, efforts have also been made to passivate a c-Si surface by S-i-a-Si:H layers with a refinement in the plasma source itself (H 2 and Ar gas concentration variation) [10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of silicon surface passivation by sputtered amorphous silicon and thermally evaporated molybdenum oxide films using temperature- and injection-dependent lifetime spectroscopy

Singh¹,

Nayak²,

Singh³

et al. 2020

Semicond. Sci. Technol.

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Crystalline silicon (c-Si) surface passivation has been investigated by sputtered hydrogenated intrinsic amorphous silicon (S-i-a-Si:H) and thermally evaporated molybdenum oxide (MoOx) thin films. The temperature- and injection-dependent lifetime spectroscopy technique has been adopted for analyzing the passivation quality of the c-Si surface, using parameters such as the minority carrier effective lifetime (τeff), the activation energy of surface/interface defect states (ΔE), and the electron to hole carrier capture cross-section ratio (k) at the interface. With S-i-a-Si:H films, a τeff of ∼70 µs and ΔE of ∼51 meV have been observed in comparison to a τeff of ∼110 µs and ΔE of ∼109 meV from the MoOx films. These entirely different parameters are an indication of the relatively strong carrier recombination with dense interface/surface states from the S-i-a-Si:H passivation layers. The S-i-a-Si:H layers are unable to minimize the c-Si surface trap states with the chemical passivation for reducing carrier recombination due to the generation of additional surface defect states by the sputtering damage. However, the MoOx layers show better c-Si surface passivation due to the reduction of majority carriers by the carrier inversion (field-effect passivation) and chemical passivation. This effect is clearly reflected with the opposite trend in the carrier capture analysis from S-i-a-Si:H and MoOx layers.

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Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering

Cited by 13 publications

References 39 publications

Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Substrate Potential Dependence of Optical Characteristics of a-Si:H for Shortwave Near-infrared Filter by DC and RF Sputtering

Investigation of silicon surface passivation by sputtered amorphous silicon and thermally evaporated molybdenum oxide films using temperature- and injection-dependent lifetime spectroscopy

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