Ag/ITO/MoO x /n-Si/LiF x /Al carrier-selective contact (CSC) solar cell structures are modelled and numerically simulated based on the experimental data using an industrial quality base silicon wafer by the Sentaurus TCAD software. The role of (1) electron-selective lithium uoride (LiF x ) layer and its thickness, ( 2) hole-selective molybdenum oxide (MoO x ) work function variation, and (3) front contact (MoO x /n-Si) surface passivation interlayer are explored on the device performance. The electron-selective LiF x layer at the rear side is led to the strong enhancement in device photocurrent by providing the electrical barrier to the minority carriers (holes) and slight improvement in open-circuit voltage, but the thickness of the layer is sensitive to e cient extraction of the majority carriers (electrons). The holeselective MoO x layer work function needs to engineer for inducing the strong inversion layer with better built-in potential at the MoO x /n-Si junction to achieve high open-circuit voltage from a cell. A thin SiO x interlayer at the MoO x /n-Si junction has enhanced the device open-circuit voltage signi cantly by minimizing the minority carrier recombination at the interface.