Effect of residual stress on modal patterns of MEMS vibratory gyroscope

Dutta, Shankar; Panchal, Abha; Kumar, Manoj; Pal, R.; Bhan, R. K.

doi:10.1063/1.4945223

“…Micro-electro-mechanical system (MEMS) based sensors and actuators are used in a wide variety of applications like military, aerospace, industrial, consumer electronics, healthcare, as well as in agriculture and environment monitoring [1][2][3][4][5][6][7][8][9][10]. The devices like pressure sensors, accelerometers, gyroscope, and temperature sensors are the few most sort after MEMS sensors for these applications [8,[11][12][13][14][15]. On the other hand, smart actuation mechanisms like shape-memory effect, electrostatic, magnetic and piezoelectric are intelligently employed to perform the various desired microscopic operation with great precision [7,14,[16][17][18][19][20] Ever since the introduction of the famous mechanical resonator gate transistor reported by Nathan et al [21], micro-resonators are the important building block of many MEMS devices [22][23][24][25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Pandey

¹

,

Dutta

²

,

Gupta

³

et al. 2021

J Mater Sci: Mater Electron

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Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.

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“…Micro-electro-mechanical system (MEMS) based sensors and actuators are used in a wide variety of applications like military, aerospace, industrial, consumer electronics, healthcare, as well as in agriculture and environment monitoring [1][2][3][4][5][6][7][8][9][10]. The devices like pressure sensors, accelerometers, gyroscope, and temperature sensors are the few most sort after MEMS sensors for these applications [8,[11][12][13][14][15]. On the other hand, smart actuation mechanisms like shape-memory effect, electrostatic, magnetic and piezoelectric are intelligently employed to perform the various desired microscopic operation with great precision [7,14,[16][17][18][19][20] Ever since the introduction of the famous mechanical resonator gate transistor reported by Nathan et al [21], micro-resonators are the important building block of many MEMS devices [22][23][24][25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator 

Pandey

¹

,

Dutta

²

,

Gupta

³

et al. 2021

Preprint

Self Cite

1

0

View full text Add to dashboard Cite

Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.

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Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution

Dutta

¹

,

Gupta

²

,

Yadav

³

et al. 2018

Microsyst Technol

4

0

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Effect of residual stress on modal patterns of MEMS vibratory gyroscope

Cited by 5 publications

References 11 publications

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator

Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution

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Effect of residual stress on modal patterns of MEMS vibratory gyroscope

Cited by 5 publications

References 11 publications

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Evaluation of Residual Stress of C Oriented AlN/Si&nbsp;(111) and Its Impact on Mushroom Shaped Piezoelectric Resonator&nbsp;

Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution

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Product

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Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator