Effect of rapid thermal annealing on Si rich SiO2 films prepared using atom beam sputtering technique

Effects of the amount of Si rings on the phase separation and crystallization of silicon-rich SiO2 thin films

“…3(a) and (b) shows the FT-IR spectra of SiO 0.7 thin films and SiO 1.5 thin films subjected to the RTA at 100-1000 • C for 120 s, respectively. The peaks at about 460, 808, and 1000-1100 cm −1 , characteristic of silicon oxide films, are due to the O Si O rocking, Si O Si bending, and Si O Si asymmetrical stretching vibrations, respectively [28,29]. The peak position and intensity of the three peaks increased with the increased of annealing temperature, which indicated that the Si Si x O 4−x (1 < x < 3) clusters were separated into Si O 4 clusters and Si Si 4 clusters [28].…”

Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study

“…Different types of insulating materials, especially SiO 2 , have been used to grow multilayer structure (Si/SiO 2 ), because multilayer structure can overcome the Shockley‐Queisser limit of 30% efficiency . Irrespective of growth technique used, variation in Si phonon wavenumbers in the range 495–519 cm −1 in Si–SiO 2 NCp is reported in the literature . Various groups have reported different Si phonon wavenumbers in the range noted in the preceding texts, using different excitations for Si–SiO 2 NCps.…”

Reduction of residual stress in SiO2‐matrix silicon nano‐crystal thin films by a combination of rapid thermal annealing and tube‐furnace annealing

“…Depositing Si rich oxide (SRO) thin films with subsequent high‐temperature (HT) annealing is one of the most popular methods for preparing Si‐NC thin films. Tube‐furnace annealing 3, rapid thermal annealing (RTA) 4, 5, and laser annealing 6–8 have been employed to prepare Si‐NCs commonly. RTA is cost effective among them 9–11.…”