“…3(a) and (b) shows the FT-IR spectra of SiO 0.7 thin films and SiO 1.5 thin films subjected to the RTA at 100-1000 • C for 120 s, respectively. The peaks at about 460, 808, and 1000-1100 cm −1 , characteristic of silicon oxide films, are due to the O Si O rocking, Si O Si bending, and Si O Si asymmetrical stretching vibrations, respectively [28,29]. The peak position and intensity of the three peaks increased with the increased of annealing temperature, which indicated that the Si Si x O 4−x (1 < x < 3) clusters were separated into Si O 4 clusters and Si Si 4 clusters [28].…”