Effect of rapid thermal annealing on the optical properties of MBE growth GaNAs films

MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates

“…This difference may be caused by thermal annealing effects during the MOVPE growth of the p-AlGaP cladding layer. Blueshifts of the peak photon energy after thermal annealing were reported for GaPN [31] and GaAsN alloys [32]. The blueshift might be due to a reduction of spatial N fluctuations and diffusion of N clusters during thermal annealing.…”

Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

“…A PL peak of approximately 1.9 eV corresponded to the near-bandedge emission from GaPN with 2% N composition. A comparison of the RTA-only and proton/electron irradiated samples revealed that PL peak intensity increased without any shift in the peak photon energy whereas a blue shift of the peak photon energy after RTA is observed in nonirradiated GaPN 8) and GaAsN samples 18) after annealing. This means that proton/electron irradiation had a minor effect on the possible mechanisms of the annealing-induced bandgap blueshift in GaPN.…”

Optimization of Well Width and N Content for Optical Properties of GaNAs/GaAs Multiple Quantum Well Grown by RF-Molecular Beam Epitaxy

“…It is reported that the photoluminescence (PL) intensity of GaNAs alloy and GaNAs/GaAs QW markedly decreases as nitrogen content increases. 6,7) Many studies for the improvement of optical properties have been reported, which involved the use of tilted substrates 8) and various annealing techniques, [9][10][11][12][13][14][15][16] such as rapid thermal annealing (RTA), which increases PL intensity markedly. The increase in PL intensity brought about by RTA is thought to be due to the reduction of growth-induced defects.…”