Optimization of Well Width and N Content for Optical Properties of GaNAs/GaAs Multiple Quantum Well Grown by RF-Molecular Beam Epitaxy

Abstract

We have investigated the optical properties in GaNAs/GaAs multiple quantum wells (MQWs) with various GaNAs layer widths and N contents, which were fabricated on GaAs(001) substrates by molecular beam epitaxy using an RF-plasma source. In particular, when the GaNAs layer thickness, L W , was 3 monolayers (ML), the photoluminescence (PL) peak intensity around 1.31 eV was approximately 70 times stronger than that in the case of L W ¼ 10 ML. Moreover, the full width at half maximum of the dominant PL peak became narrow as GaNAs layer thickness decreased, even though N content was increased.

Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junction

“…High thermal stabilities of GaNAs optical properties have been reported in some papers [7]~ [9] , where the temperature dependence of emission peak position is small for the GaNAs/GaAs hetero structures. In previous studies of our group [10]~ [12] , we have observed light emission at room temperature from the GaNAs/GaAs MQWs [11] . From the above-mentioned advantages, application of Ga(In)NAs for long wavelength devices and multi-junction solar cells have been expected [13]~ [17] .…”

Investigation of the confinement potential within GaNAs/GaAs multiple quantum wells

“…In our previous study, we proposed the modulated N radical beam source technique for successfully growing high-quality GaNAs/GaAs MQWs [7,8]. We reported the optical properties of GaNAs/GaAs MQWs; the roughness of the hetero-interface and the crystalline defect in the MQWs were observed to affect the quantum confinement [9]. However, the magnitude of this effect and the detailed potential structure within GaNAs/GaAs MQWs have not been clarified yet.…”