Effect of pretreatment, seeding and interlayer on nucleation and growth of HFCVD diamond films on cemented carbide tools

Sarangi, Saroj Kumar; Chattopadhyay, A.K.

doi:10.1016/j.ijrmhm.2007.05.002

Cited by 36 publications

(18 citation statements)

References 28 publications

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“…3), 4) We recently reported a newly developed pretreatment process called the Electrostatic Self-Assembly of Nano Diamond (ESAND) seeding method. 5) In this method, cationic nanodiamond particles were encapsulated with anionic polymer chains and then spontaneously dispersed in aqueous solution.…”

Section: Introductionmentioning

confidence: 99%

Adhesion of nanodiamond seeded CVD diamond on ceramic substrate

Jung

Kim

Lee

et al. 2009

J. Ceram. Soc. Japan

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Conventional structural ceramic substrates were coated with 1 μm thick polycrystalline CVD diamond layer by using the hot filament CVD system and subsequently tested. The substrates chosen were silicate, alumina, silicon nitride, and silicon carbide ceramics. To achieve a high nucleation density and to improve the adhesion between the diamond and the ceramic substrate, the newly developed Electrostatic Self-Assembly of Nano Diamond (ESAND) seeding method was used. This seeding method initiates the growth of crystalline diamond. For this seeding procedure, each negatively charged substrate surface was covered with a cationic polymer monolayer. Next, anionic polymer coated cationic nanodiamond particles were attached to the substrate by the electrostatic self-assembly process. The degree of adhesion between the diamond film and each substrate was investigated by micro-scratch testing. These tests involved the use of a Rockwell C indenter (r = 0.2 mm), which scratched the samples at a speed of 10 mm/min under a progressive normal load (from 0 to 21N). The morphology of the poly-crystalline diamond films on the various substrates was analyzed using Raman spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Adhesion of nanodiamond seeded CVD diamond on ceramic substrate

Jung

Kim

Lee

et al. 2009

J. Ceram. Soc. Japan

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“…Typical thicknesses of the PVD films range from few to 10 microns. Ti-based interlayers on WC-Co substrate deposited by unbalanced magnetron sputtering have also been reported in the literature [17]. SiC interlayers applied on WC-Co substrates by chemical vapor deposition, with tetramethylsilane (TMS) as single-source precursor for both silicon and carbon, are often reported in the literature [18].…”

Section: Methodsmentioning

confidence: 94%

Recent Advances in the Deposition of Diamond Coatings on Co-Cemented Tungsten Carbides

Polini

Barletta

Rubino

et al. 2012

Advances in Materials Science and Engineering

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Co-cemented tungsten carbides, namely, hard metals are largely used to manufacture high wear resistant components in several manufacturing segments. Coating hard metals with superhard materials like diamond is of utmost interest as it can further extend their useful lifespan. The deposition of diamond coatings onto WC-Co can be extremely complicated as a result of poor adhesion. This can be essentially ascribed to (i) the mismatch in thermal expansion coefficients between diamond and WC-Co, at the typical high temperatures inside the chemical vapour deposition (CVD) chamber, generates large residual stresses at the interface; (ii) the role of surface Co inside the WC-Co matrix during diamond CVD, which promotes carbon dissolution and diffusion. The present investigation reviews the techniques by which Co-cemented tungsten carbides can be treated to make them prone to receive diamond coatings by CVD. Further, it proposes interesting ecofriendly and sustainable alternatives to further improve the diamond deposition process as well as the overall performance of the coated hard metals.

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“…As the surface roughness increases, the surface energy increases, which makes it easier to deposit the diamond. The growth rate of the diamond can be accelerated by the influence of the residual diamond particles [14].…”

Section: Experimental Work Using Hf-cvdmentioning

confidence: 99%

Computer Simulation of Temperature Parameter for Diamond Formation by Using Hot-Filament Chemical Vapor Deposition

et al. 2017

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To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in a hot filament chemical vapor deposition (HF-CVD) system. In this study, the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16, and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software ANSYS-FLUENT. To account for radiative heat-transfer in the HF-CVD reactor, the discrete ordinate (DO) model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512-2802 K and 1076-1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with the experimental temperatures measured using a two-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

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Effect of pretreatment, seeding and interlayer on nucleation and growth of HFCVD diamond films on cemented carbide tools

Cited by 36 publications

References 28 publications

Adhesion of nanodiamond seeded CVD diamond on ceramic substrate

Adhesion of nanodiamond seeded CVD diamond on ceramic substrate

Recent Advances in the Deposition of Diamond Coatings on Co-Cemented Tungsten Carbides

Computer Simulation of Temperature Parameter for Diamond Formation by Using Hot-Filament Chemical Vapor Deposition

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