Effect of precursors pre-annealing on the microstructure of Cu2ZnSnS4 thin films on titanium foil substrate

Bashkirov, S. A.; Гременок, В. Ф.; Juškėnas, Remigijus; Giraitis, Raimondas; Rakitin, V. V.; Новиков, Г. Ф.

doi:10.1016/j.tsf.2018.08.035

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…The refined diffraction pattern showed the goodness of fit χ 2 = 1.8 with R wp = 5.55 and confirmed the formation of single‐phase CAZTSe (SG: I

\overset{\cdot}{4}

) and yielded the unit cell parameters a = 5.8698(4) Å and c = 11.360(1) Å, which are compatible with the reported literature. [ 1,41 ] Furthermore, compared to CZTSe thin films, the rise in lattice parameter values verifies the inclusion of Ag, which has a larger atomic size than Cu.…”

Section: Resultsmentioning

confidence: 93%

“…In addition, preannealing assists in the uniform distribution of all constituents across the entire thickness of the film. [41] Pre-annealing/ selenization combined with high-temperature annealing of thin films decreases defect density, promotes recrystallization, and improves grain size, all of which boost the absorber layer's crystal quality. [42,43] To date, although there have been a few reports available on the growth of kesterite-based CAZTSe films, none of the reports illustrating the influence of PAT on the growth and physical properties of CAZTSe thin films have been found.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Patil,

Mondal,

Babujani

et al. 2024

Physica Status Solidi (b)

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In this work, the preparation of “Ag” alloying Cu2ZnSnSe4 films using a two‐step process, comprising vacuum evaporated ([Sn/ZnSe/Ag/Sn/ZnSe/Cu] × 2) precursor layer deposition on glass substrates followed by low‐temperature pre‐annealing treatment (PAT) in Se ambiance (200–400 °C) for 30 min and high‐temperature annealing at 500 °C for 1 min, is reported. The low‐temperature PAT provides adequate Se diffusion into precursor layers and plays a pivotal influence on the growth and properties of (Cu,Ag)2ZnSnSe4 films. The Zn/Sn and Se/metals ratios are found to be varied in the range 0.77–1.32 and 1.07–0.86 with PAT (200–400 °C) followed by annealing at 500 °C for 1 min. The precursor layers are pre‐annealed at 300 °C for 30 min, followed by annealing at 500 °C for 1 min, found to be nearly stoichiometric with uniform distribution of constituents. The valence states of the constituents are confirmed by X‐Ray photoelectron spectroscopy. Both X‐Ray diffraction and Raman studies confirm the formation of single‐phase (Cu,Ag)2ZnSnSe4 along (112) orientation with a strong Raman mode at 194 cm−1. Large and well‐defined grains with a mean size of 0.7 μm are seen in the field‐emission scanning electron microscope images. The (Cu,Ag)2ZnSnSe4 films exhibit a direct bandgap of 1.12 eV and p‐type conductivity with high mobility, 5.23 cm2 V−1 s−1.

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“…The refined diffraction pattern showed the goodness of fit χ 2 = 1.8 with R wp = 5.55 and confirmed the formation of single‐phase CAZTSe (SG: I

\overset{\cdot}{4}

Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Patil,

Mondal,

Babujani

et al. 2024

Physica Status Solidi (b)

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“…1,2 In such type of kesterite-based thin film solar cells, the highest photovoltaic conversion efficiency has been reported as 12.6% for Cu 2 ZnSn(S x Se 1-x ) 4 solid solution. 3 CZTS, CZTSe, and CZTSSe absorbers can be produced using various methods such as sputtering, 4,5 thermal evaporation, 6,7 pulsed laser deposition, 8,9 electrodeposition, 10,11 spray pyrolysis 12,13 and sol-gel. 14,15 Among these methods, sputtering is considered as one of the most advantageous methods in terms of large-scale deposition and mass production of thin film solar cells in the industry.…”

mentioning

confidence: 99%

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

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Summary Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films were grown on soda lime glass and Mo‐coated soda lime glass substrates by deposition of the precursor films via RF magnetron sputtering method in the stacking orders of Cu/Sn/Zn/Mo/SLG and Cu/Sn/ZnS/Mo/SLG using metallic Zn or binary sulfide ZnS targets and subsequently carrying out of selenization process. It was aimed to find out the effect of Zn or ZnS target types and the small amount of S originated from ZnS target material used in the deposition of precursor films on the structural, morphological, optical, and electrical characteristics of the films to be selenized. XRD and Raman spectroscopy analysis showed that the kesterite CZTSe structure was predominantly formed in both cases where Zn and ZnS targets were used. According to the EDX analysis, S content in the prepared film using ZnS target was only around 1.79 at%. This indicated that a considerable amount of S in the film was driven out during the selenization process. Scanning electron microscopy analysis revealed that ZnS target material contributed to the achievement of the absorber films with larger grain size. It was also determined that the thickness of the interfacial MoSe2 film between the absorber and Mo films decreased by using ZnS target in the precursor film. This was attributed to ZnS layer with a high melting point acting as a barrier layer over Mo film and retarding the diffusion of Se into the Mo film during the selenization process. In addition, the band gap energy values of the Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films were found to be 1.18 and 1.28 eV, respectively.

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Structural, Morphological and Optical Properties of Cu2MSnS4 (M = Cu0.5Ni0.5) Synthesized by a Simple and Low Cost Electrodeposition Technique

et al. 2022

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Effect of precursors pre-annealing on the microstructure of Cu2ZnSnS4 thin films on titanium foil substrate

Cited by 8 publications

References 21 publications

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Structural, Morphological and Optical Properties of Cu2MSnS4 (M = Cu0.5Ni0.5) Synthesized by a Simple and Low Cost Electrodeposition Technique

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Effect of precursors pre-annealing on the microstructure of Cu2ZnSnS4 thin films on titanium foil substrate

Cited by 8 publications

References 21 publications

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Structural, Morphological and Optical Properties of Cu2MSnS4 (M = Cu0.5Ni0.5) Synthesized by a Simple and Low Cost Electrodeposition Technique

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Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks