Effect of Precursor Composition on Ion Migration in Hybrid Perovskite CH3NH3PbI3

Haque, Farjana; Hoang, Nhu Thi To; Ji, Jeoungmin; Mativenga, Mallory

doi:10.1109/led.2019.2939363

Cited by 19 publications

(29 citation statements)

References 33 publications

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“…Y, Cr, IZO, ITO and graphene represent promising alternatives as robust contact materials, where such reactions do not occur. [93,[141][142][143]149,152,178,180] A solution to the Au interface reactivity problem is treatment with a SAM or insertion of an interlayer. [65] In addition to acting as a physical barrier to electrochemical degradation, these chemical functionalizations allow for the tuning of the injection barrier at the semiconductor/contact interface and, in some cases, assist with improving the perovskite film microstructure by modifying the surface energy.…”

Section: Source-drain Electrodes Used In Perovskite Fetsmentioning

confidence: 99%

“…For example, while the electron mobility of MAPbI 3 FETs was highest when the ratio of MAI:PbI 2 in the precursor was 6:5 (μ e = 0.05 cm 2 V –1 s –1 ), the current‐voltage hysteresis was substantially reduced by changing the ratio to 4:5, albeit with the electron mobility dropping to μ e = 0.02 cm 2 V –1 s –1 . [ 142 ] In a different report, however, the same group found that the precursor with a component ratio MAI:PbI 2 of 1:1 exhibits the highest electron mobility of μ e = 0.1 cm 2 V –1 s –1 , [ 143 ] underlining the importance of fine tuning the stoichiometry in achieving consistent device performance. By using a solvent combination of diethylsulfide and N , N ‐dimethylformamide (DMF) and increasing the MA concentration in the precursor solution, Jana et al.…”

Section: Current Status In Perovskite Transistors and Phototransistorsmentioning

confidence: 99%

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Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

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Section: Source-drain Electrodes Used In Perovskite Fetsmentioning

confidence: 99%

Section: Current Status In Perovskite Transistors and Phototransistorsmentioning

confidence: 99%

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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show abstract

“…These unique properties are the reasons for their success in photovoltaics. In addition to photovoltaic applications, hybrid perovskites are also appealing for several other applications, and research on light emitting diodes (LEDs), lasers, photodetectors, and thin‐film transistors (TFTs) is already underway. Although rapid progress has been made, reliability and stability still limit the application of these materials in commercial products.…”

Section: Introductionmentioning

confidence: 99%

“…A well‐known problem is ion migration, which leads to the strong dependency of device current–voltage ( I – V ) characteristics on voltage scan rate, direction, and bias history. Despite the efforts of many investigations, this problem of ion migration‐induced hysteresis remains unsolved …”

Section: Introductionmentioning

confidence: 99%

“…Despite the efforts of many investigations, this problem of ion migration-induced hysteresis remains unsolved. [30][31][32][33][34][35][36][37][38][39] Although there is evidently abundant literature on techniques to enhance the PCE of solar cells, the development of perovskite TFTs is still lagging, given that most of these techniques do not directly apply to TFTs. In planar perovskite TFTs, for instance, the lateral conductance of the perovskite film is controlled by a voltage applied to the gate.…”

mentioning

confidence: 99%

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Ambient Air Stability of Hybrid Perovskite Thin‐Film Transistors by Ambient Air Processing

Mativenga

Hoang

et al. 2020

Adv Materials Inter

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Despite the widespread research on organic–inorganic hybrid perovskites, the ambient air instability and ion migration‐induced hysteresis in the current–voltage characteristics of their devices remain unsolved. Here, it is shown that stable ambient air operation of methylammonium lead iodide (MAPbI3) thin‐film transistors can be achieved by solution processing of the MAPbI3 film in ambient air via solvent engineering. N,N‐dimethylformamide (DMF), mixed with dimethyl sulfoxide (DMSO) and hydroiodic acid (HI), is found to be the most suitable solvent for one‐step deposition in ambient air. While the HI promotes homogeneous nucleation, the low boiling point of DMF and the high vapor pressure and strong Lewis base property of DMSO lead to fast crystallization and consequent large grain size. The oxygen in air passivates grain boundary defects, thereby improving lateral conduction and minimizing grain boundary defect‐mediated ion migration. This approach paves the way for the simple fabrication of hybrid perovskites by eliminating the need for well‐controlled inert environments and provides a solution for the problem of ambient air stability in perovskite devices.

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Mixed‐Halide Perovskite Memristors with Gate‐Tunable Functions Operating at Low‐Switching Electric Fields

Rogdakis,

Chatzimanolis,

Psaltakis

et al. 2023

Adv Elect Materials

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Crossbar circuits based on two terminal (2T) memristors typically require an additional unit such as a transistor for individual node selection. A memristive device with gate‐tunable synaptic functionalities will not only integrate selection functionality at the cell level but can also lead to enriched on‐demand learning schemes. Here, a three‐terminal (3T) mixed‐halide perovskite memristive device with gate‐tunable synaptic functions operating at low potentials is demonstrated. The device operation is controlled by both the drain (VD) and gate (VG) potentials, with an extended endurance of >2000 cycles and a state retention of >5000 s. Applying a voltage (Vset) of 20 V across the 50 µm channel switches its conductance from a high‐resistance state (HRS) to a low‐resistance state (LRS). A memristive switching mechanism is proposed that is supported by current injection models through a Schottky barrier and Kelvin probe force microscopy data. The simultaneous application of a VG potential is found to further modulate the channel conductance and reduce the operating Vset to 2 V, thus requiring a low electric field of 400 V cm−1, which is by a factor of 50× less compared to state‐of‐the‐art literature reports. Gate‐tunable retention, endurance, and synaptic functionalities are demonstrated, further highlighting the beneficial effect of VG on device operation.

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Effect of Precursor Composition on Ion Migration in Hybrid Perovskite CH₃NH₃PbI₃

Cited by 19 publications

References 33 publications

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Ambient Air Stability of Hybrid Perovskite Thin‐Film Transistors by Ambient Air Processing

Mixed‐Halide Perovskite Memristors with Gate‐Tunable Functions Operating at Low‐Switching Electric Fields

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