2018
DOI: 10.1116/1.5003283
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Effect of postannealing on properties of ZnO-SnO2 thin film transistors

Abstract: Herein, the influence of postannealing on the properties of ZnO-SnO2 (ZTO) thin-film transistors (TFTs) was investigated. Postannealing in ambient air induced recovery of the electrical properties of wet-etch-damaged TFTs and a decrease in the subthreshold swing. Also, the field effect mobility increased with increasing postannealing temperature. Further improvement of the electrical properties of ZTO TFTs was not obtained with a further increase in annealing time. After postannealing at 200 °C for 60 min in t… Show more

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Cited by 7 publications
(4 citation statements)
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“…76,77 In addition, in this study, a high-temperature annealing process is applied to the TFTs, which can help reduce interface states. 78 Therefore, the interface between SnO x and ZTO may not significantly affect the TFT performance, which may also be one of the reasons why the ZTO/SnO x /ZTO TFT has an optimal electrical property. In addition to reducing the interface states, the annealing process also helps the Sn 4+ ions in the middle SnO x layer diffuse to the top and bottom ZTO layers.…”
Section: Resultsmentioning
confidence: 99%
“…76,77 In addition, in this study, a high-temperature annealing process is applied to the TFTs, which can help reduce interface states. 78 Therefore, the interface between SnO x and ZTO may not significantly affect the TFT performance, which may also be one of the reasons why the ZTO/SnO x /ZTO TFT has an optimal electrical property. In addition to reducing the interface states, the annealing process also helps the Sn 4+ ions in the middle SnO x layer diffuse to the top and bottom ZTO layers.…”
Section: Resultsmentioning
confidence: 99%
“…Tin dioxide has been attracting scientific attention all over the world for decades, both as an individual material [1][2][3][4] and as a component of more complex substances, especially transparent electrodes, including ITO [5,6], SnGaO [7], ZnSnO (ZTO) [8,9], SnO 2 :F (FTO) [10], Al-Sn-Zn-O (ATZO) [11], SnO 2 @N [12] and others. This material is a wide-bandgap semiconductor (E g ~3.…”
Section: Introductionmentioning
confidence: 99%
“…As an n-type metal oxide semiconductor, tin dioxide (SnO 2 ) has a wide band gap of Eg = 3.6 eV and excellent optical and electrical properties. SnO 2 have been one of the most extensive studied materials due to its wide applications including in transparent conductive electrodes and transistors (Liu et al, 2018 ; Satoh et al, 2018 ), lithium-ion batteries (Zhao et al, 2016 ; Shi et al, 2017 ), dye-sensitized solar cells (Hagfeldt et al, 2010 ), photocatalysis (Aslam et al, 2018 ; Praus et al, 2018 ) and gas sensors (Narjinary et al, 2017 ; Long et al, 2018 ; Xu et al, 2018 ). For gas sensing application, SnO 2 and SnO 2 based composites also show admirable gas sensing properties like low-cost, low detection limit, fast response and recovery, high response and good stability (Yan et al, 2015 ; Cao et al, 2017 ; Kim et al, 2017 ).…”
Section: Introductionmentioning
confidence: 99%