Effect of post deposition annealing on the structure, morphology, optical and electrical properties of CuInGaSe2 thin films

Pugalenthi, A.S.; Balasundaraprabhu, R.; Prasanna, S.; Habibuddin, Shaik; Muthukumarasamy, N.; Rao, G. Mohan; Kannan, M.D.

doi:10.1016/j.optmat.2016.09.045

Cited by 9 publications

(1 citation statement)

References 39 publications

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“…[33] Second, 300 C annealing treatments in N 2 environment have a demonstrated influence on the materials composition, especially with respect to charge and interface trap distribution, [3,4,13,34] and grain boundary. [35] Therefore, we aim at seeing potential improvements of our multistack devices after application of such annealing processes.…”

Section: Motivationmentioning

confidence: 99%

Comparative Study of Al₂O₃ and HfO₂ for Surface Passivation of Cu(In,Ga)Se₂ Thin Films: An Innovative Al₂O₃/HfO₂ Multistack Design

Scaffidi

Buldu

Brammertz

et al. 2021

Physica Status Solidi (a)

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In Cu(In,Ga)Se 2 (CIGS) thin-film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Herein, metal-insulator-semiconductor samples are used to investigate and compare the passivation effects of Al 2 O 3 and HfO 2 at the interface with CIGS. Capacitance-voltage-frequency measurements allow to qualitatively and quantitatively assess the existence of high negative charge density (Q f % À10 12 cm À2 ) and low interface-trap density (D it % 10 11 cm À2 eV À1 ). At the rear interface of CIGS solar cells, these, respectively, induce field-effect and chemical passivation. A trade-off is highlighted between stronger field-effect for HfO 2 and lower interface-trap density for Al 2 O 3 . This motivates the usage of Al 2 O 3 to induce chemical passivation at the front interface of CIGS solar cells but raises the issue of its processing compatibility with the buffer layer. Therefore, an innovative Al 2 O 3 /HfO 2 multistack design is proposed and investigated for the first time. Effective chemical passivation is similarly demonstrated for this novel design, suggesting potential decrease in recombination rate at the front interface in CIGS solar cells and increased efficiency. 300 C annealing in N 2 environment enable to enhance passivation effectiveness by reducing D it while surface cleaning may reveal useful for alternative CIGS processing methods.

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Section: Motivationmentioning

confidence: 99%

Comparative Study of Al₂O₃ and HfO₂ for Surface Passivation of Cu(In,Ga)Se₂ Thin Films: An Innovative Al₂O₃/HfO₂ Multistack Design

Scaffidi

Buldu

Brammertz

et al. 2021

Physica Status Solidi (a)

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Synthesis, characterization, and electrical properties of CuInGaSe2/SiO2/n-Si structure

et al. 2021

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Simulation of novel CFTS solar cells with SCAPS-1D software

Zhou,

Chen,

Chen

et al. 2024

J Opt

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Effect of post deposition annealing on the structure, morphology, optical and electrical properties of CuInGaSe2 thin films

Cited by 9 publications

References 39 publications

Comparative Study of Al₂O₃ and HfO₂ for Surface Passivation of Cu(In,Ga)Se₂ Thin Films: An Innovative Al₂O₃/HfO₂ Multistack Design

Comparative Study of Al₂O₃ and HfO₂ for Surface Passivation of Cu(In,Ga)Se₂ Thin Films: An Innovative Al₂O₃/HfO₂ Multistack Design

Synthesis, characterization, and electrical properties of CuInGaSe2/SiO2/n-Si structure

Simulation of novel CFTS solar cells with SCAPS-1D software

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Effect of post deposition annealing on the structure, morphology, optical and electrical properties of CuInGaSe2 thin films

Cited by 9 publications

References 39 publications

Comparative Study of Al2O3 and HfO2 for Surface Passivation of Cu(In,Ga)Se2 Thin Films: An Innovative Al2O3/HfO2 Multistack Design

Comparative Study of Al2O3 and HfO2 for Surface Passivation of Cu(In,Ga)Se2 Thin Films: An Innovative Al2O3/HfO2 Multistack Design

Synthesis, characterization, and electrical properties of CuInGaSe2/SiO2/n-Si structure

Simulation of novel CFTS solar cells with SCAPS-1D software

Contact Info

Product

Resources

About

Comparative Study of Al₂O₃ and HfO₂ for Surface Passivation of Cu(In,Ga)Se₂ Thin Films: An Innovative Al₂O₃/HfO₂ Multistack Design

Comparative Study of Al₂O₃ and HfO₂ for Surface Passivation of Cu(In,Ga)Se₂ Thin Films: An Innovative Al₂O₃/HfO₂ Multistack Design