Effect of porous Si and an etch-back process on the performance of a selective emitter solar cell

High efficiency large area n -type front junction silicon solar cells with boron emitter formed by screen printing technology

“…This is supported by group (c), which gave high τ bulk (>1.1 ms) when a CET was used to remove the BRL prior to SiN x deposition. However, J 0,emitter of group (c) is worse than group (b) in spite of no BRL and same SiN x passivation because the chemical etching in group (c) induces some damage on the Si surface , which increases interface recombination. Therefore, to solve this surface passivation problem by avoiding the second oxidation, while maintaining good τ bulk , a chemical oxide (SiO x ) was grown in group (d) after the BRL etch, followed by SiN x deposition.…”

Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment

“…For the planar and SiNWs device, the distance of photogenerated carriers in the silicon substrate transporting to the top contact is about several micrometers, which is the length of SiNWs. The poor carrier collection efficiency in the deep region of the silicon substrate causes low photocurrent and low IQE [ 24 ].…”

Selective nano-emitter fabricated by silver assisted chemical etch-back for multicrystalline solar cells

“…However, such an etch-back process results in variations of the texturing morphology, which increase the reflectivity. 24 In contrast, the reflection of SNEs is reduced thanks to the gradually varying refractive index of the nanostructure layer. As shown in Fig.…”