Effect of porous layer engineered with acid vapor etching on optical properties of solid silicon nanowire arrays

Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmean; Chtourou, R.; Ezzaouia, Hatem

doi:10.1016/j.matdes.2016.08.082

Cited by 14 publications

(4 citation statements)

References 46 publications

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“…In recent years, silicon nanowires (SiNWs) have aroused tremendous attention worldwide thanks to the following outstanding features: (1) Environment-friendly as second most earth-abundant materials; (2) unique dimensional structures (1 D); (3) interesting electrical and optical properties compared to bare silicon; (4) affordable fabrication; and (5) potential applications in several fields [1][2][3][4][5]. The various applications of these nanostructures may include lithium-ion batteries [6], biochemical sensors [7,8], electronics [9], catalysis [10], and solar cells [1,11].…”

Section: Introductionmentioning

confidence: 99%

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

et al. 2020

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In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9-15% in comparison with Si wafer. I-V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung's model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs' length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.Nanomaterials 2020, 10, 404 2 of 18 time-consuming and therefore hindered their applications for commercialized products. In contrast, an effective and promising synthetic method namely metal assisted chemical etching (MACE) has been proposed [2,4,[18][19][20]. This technique is simple, rapid, low cost, and suitable for both industrial and laboratory scales. Moreover, MACE allows to obtain high crystalline SiNWs quality, as well as an easy control of the different parameters including orientation, doping type, length, and diameter.The MACE method basically consists of two procedures, the formation of metal catalysts and the subsequent etching process which can be implemented either in a single step (1-MACE) [10,21] or in two steps (2-MACE) [17-20]. Moreover, the formation method, etching time, etching temperature, metal deposition time, and lastly the etchants' concentrations have a crucial influence on the morphology of SiNWs [2,5,17]. Ghosh et al. reported that SiNWs grown by MACE are usually covered with silicon nanocrystals due to the side wall etching and which are the origin of quantum confinement (QC) effects owing to their small dimensions [20]. Recently, several research groups have succeeded in the synthesis of optically-active SiNWs exhibiting a significant PL emission and a very low reflectance [3,4,17]. On the other hand, Qi et al. have demonstrated the fabrication of electrically-active SiNWs through heavily doped SiNWs with rough surface where a high Schottky barrier exists at the interface of SiNWs and the metal [22]. Nevertheless, further investigation is required t...

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Section: Introductionmentioning

confidence: 99%

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

et al. 2020

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“…In this work, we used a mixture of acids containing a 48% of Hydrofluoricacid (HF) and 65% of Nitricacid (HNO 3 ). The HF/HNO 3 volume ratio was fixed at 3/1, based on the previous work of Amri et al [29].…”

Section: Sample Preparation 221 Chemical Engineering Of Simpsmentioning

confidence: 99%

Enhancement of both optical and catalytic activity of copper-decorated porous silicon micro-particles

Hamdi

Amri

Ouertani

et al. 2021

Eur. Phys. J. Appl. Phys.

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To the best of our knowledge, this study is the ﬁrst to investigate the effect of chemical vapour etching combined with copper decoration on both the optical and catalytic activities of silicon micro-particles (SiµPs). After exposure to acid vapours emanating from a hot solution of hydrogen fluoride/nitric acid (HF/HNO3), scanning electron microscope (SEM) images of the treated powder show the formation of a porous, sponge-like structure on the sidewalls of SiµPs. Fourier transmission infra-red analysis shows the appearance of hydride bonds related to the formation of the porous structure. X-ray diffraction measurements and Raman spectroscopy show the good crystallinity of the samples. The strong photoluminescence properties of the obtained porous SiµPs (pSiµPs) reveal that the vapour etching process generated silicon nanocrystals within these particles. In this work, we have investigated the catalytic activity of copper nanoparticles (CuNPs) loaded on the surface of pSiµPs, in order to reduce the toxic compound 4-nitrophenol to 4-aminophenol. The results show excellent catalytic performance in very short times (less than one minute).

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“…Due to the absorption and reflection layer on the surface of Si with nanostructures, the increasing silicon oxide thickness with the exposure time to air causes degradation of PL intensity. [14][15][16][17] In addition, the oxidization of Si with nanostructures inducts a blue shift of the PL peak due to the chemical instability of the surface. 18,19 Therefore, a surface passivation must be urgently solved.…”

Section: Silicon Nanowires (Sinws)mentioning

confidence: 99%

Silicon nanowires (SiNWs) surface engineering potential for bioenergy

Guo¹

2018

MOJABB

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of the surface oxide layer of SiNWs could be removed and the surface composition may be changed. Meanwhile, for the nitridation, there will be a nitride layer formed due to the reaction between the oxide and nitrogen species and the silicon nitride is air inert to the exposure and can prevent SiNWs from further oxidation. Silicon nanowires (SiNWs) HF treatment The silicon oxide layer of SiNWs serves as a protective layer rendering SiNWs relatively inert. The inertness of SiNWs is unfavorable for SiNWs applications. Thus, it is significant to

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Effect of porous layer engineered with acid vapor etching on optical properties of solid silicon nanowire arrays

Cited by 14 publications

References 46 publications

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Enhancement of both optical and catalytic activity of copper-decorated porous silicon micro-particles

Silicon nanowires (SiNWs) surface engineering potential for bioenergy

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