Effect of porosity on the electrical and photoelectrical properties of textured n+ p silicon solar cells

Youssef, G. M.; El-Nahass, M.M.; El-Zaiat, S.Y.; Farag, Mohammed

doi:10.1016/j.mssp.2015.05.054

Cited by 14 publications

(2 citation statements)

References 34 publications

(34 reference statements)

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“…It can be observed that the Al/Si+nanoPS+AgNPs/TiO 2 /NiCr device shows the lowest values for τ 1 , τ 2 , and τ 3 , which are associated with increased conduction. The observed increase in τ 1 , τ 2 , and τ 3 for the Al/Si/TiO 2 /NiCr devices is related to the large thickness of the TiO 2 thin films and the large carrier recombination rates of Si [34], as previously indicated in the analysis of the Nyquist plots. The values obtained for τ 1 , τ 2 , and τ 3 for the Al/Si+nanoPS/TiO 2 /NiCr devices are attributed to conduction losses associated with the porous structure of the nanoPS layers, as well as with the formation of defects on their surface [35].…”

Section: Ac Electrical Measurementssupporting

confidence: 70%

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Ramadan

Martín-Palma

2020

Energies

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The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO2/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO2/NiCr and Al/Si+nanoPS+AgNPs/TiO2/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.

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Section: Ac Electrical Measurementssupporting

confidence: 70%

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Ramadan

Martín-Palma

2020

Energies

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“…The ECE process was performed to produce three groups of samples by (Yerokhov et al, 2000;Youssef et al, 2015a).…”

Section: Exprimental Detailsmentioning

confidence: 99%

Fabrication and Optimization of Silicon Solar Cell Characteristics by Using Porous Silicon Layers on the Front and Back Sides

Hagar

Gamal

Mohammad

et al. 2020

Journal of Environmental Science

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Porous silicon layer (PSL) has emerged in potential solar cell applications because of its high surface area to volume ratio, convenient surface chemistry and large energy band gap ≈1.9 ev. PSL has been prepared from n+p/Si junction using electrochemical etching (ECE) with three different current densities 25, 50 and 75 mA/cm2 on the front and back side of the junction. The influence of varying current density on morphological, optical, chemical and electrical properties of PS has been inspected. SEM micrographs showed that the surface porosity of 90% on the front side, in contrast the etched back surface seemed in harmonic shape with identical pore size and porosity of 98%. The PL spectrum peak ranged from 640 to 670 nm. PSL formed on both sides has the lowest reflectivity at current density of 50 mA/cm2. The obtained FTIR spectra of the samples with a relatively high PL intensity exhibit a developed broad transmission bands in the range of 600 to 4000 Solar cell conversion efficiency of PSL formed on both sides is increased to 17% compared to other workers. Solar cell based on PSL formed on both sides provides stability and it is recommended for industry manufacturing.

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Improving the photoelectrical conversion efficiency of silicon solar cells using ZnO:Al/porous silicon double antireflective layers

et al. 2019

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Effect of porosity on the electrical and photoelectrical properties of textured n+ p silicon solar cells

Cited by 14 publications

References 34 publications

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Fabrication and Optimization of Silicon Solar Cell Characteristics by Using Porous Silicon Layers on the Front and Back Sides

Improving the photoelectrical conversion efficiency of silicon solar cells using ZnO:Al/porous silicon double antireflective layers

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