Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films

Nagar, S.; Gupta, Sachin; Chakrabarti, Subhananda

doi:10.1016/j.jlumin.2011.12.058

Cited by 25 publications

(3 citation statements)

References 21 publications

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“…From the above discussion, it can be concluded that both proposals, whichever is dominant, require high concentration of dopants suggesting that high Te and N concentrations have been achieved. 48 Similar phenomena frequently occurred in the TD-PL spectra of ZnO materials with various dopants, such as antimony, 46 phosphorus, 57 sodium, 58 arsenic, 48 and nominally undoped samples. 59 When we look at the lower energy side of the A 0 X and D 0 X from 3.300 eV to 3.340 eV in Figs.…”

Section: Resultssupporting

confidence: 52%

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

Tang

et al. 2012

Journal of Applied Physics

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The photoluminescence spectra as well as their temperature dependence of the tellurium and nitrogen (Te-N) codoped ZnO films have been investigated in detail. Explicit evidences of the emissions related to two acceptors [A1: the NO-Zn-Te subunits and A2: the conventional N ions substituting on oxygen sites (NO)] have been found. The acceptor activation energy level of the A1 (∼118–124 meV) is much shallower than that of the A2 (∼224–225 meV) indicating that the A1 should be mainly responsible for the room-temperature p-type nature of the codoped samples. Meanwhile, the acceptor activation energy level of A1 shows a slight decrease (∼6 meV) as the Te atomic concentration increases in the codoped samples implying that the actual form of the A1 may be a mixture of the NO-Zn-nTe (n = 1, 2, 3, 4). More incorporation of the Te ions into N-doped ZnO films not only makes the acceptor energy level shallower but also improves the crystalline quality and results in the efficiently suppressed native donorlike defects. The optical properties accord well with the crystalline and electrical ones indicating that the Te-N codoping technique is a potentially feasible route to get controllable p-type ZnO materials.

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Section: Resultssupporting

confidence: 52%

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

Tang

et al. 2012

Journal of Applied Physics

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“…This coupling is expected to have a significant effect on the optical properties of Ga-doped samples and requires further detailed examination. It should be mentioned that the vanishing of the direct FX emission (without phonon assistance) was also observed for doped ZnO films by other authors [69][70][71][72]. Several different factors were suggested to be responsible for the absence of the free excitonic emission peak.…”

Section: 4temperature Dependent Photoluminescencementioning

confidence: 61%

Excitonic emission in heavily Ga-doped zinc oxide films grown on GaN

Shtepliuk

Khranovskyy

Gogova

et al. 2020

Journal of Luminescence

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“…However, most of the methods used here are non-localized mechanisms which is not favorable for device fabrication Ion implantation technique is a suitable method to achieve localized doping. Researchers around the globe have been successful in achieving p-type ZnO films using ion implantation, but the reports are quite few [15][16][17][18] . Here, we have applied a plasma immersion ion implantation (PIII) technique to dope phosphorus in ZnO films and make it p-type, instead of the conventional ion implantation technique.…”

Section: Introductionmentioning

confidence: 99%

P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

Nagar

Chakrabarti

2013

Oxide-Based Materials and Devices IV

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ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnObased devices. In order to make p-type ZnO films, phosphorus implantation, using plasma immersion ion-implantation technique (2kV, 900W, 10µs pulse width) for 30 seconds, was performed on ZnO thin film deposited by RF Magnetron Sputtering (Sample A). The implanted samples were subsequently rapid thermal annealed at 700°C and 1000°C (Samples B and C) in oxygen environment for 30 seconds. Low temperature (8K) photoluminescence spectra reveal dominant donor-bound exciton (D°X) peak at 3.36eV for samples A and B. However, for Sample B the peaks around 3.31eV and 3.22eV corresponding to the free electron-acceptor (FA) and donor to acceptor pair peaks (DAP) are also observed. A dominant peak around 3.35eV, corresponding to acceptor bound exciton (A°X) peak, is detected for Sample C alongwith the presence of FA and DAP peaks around 3.31eV and 3.22eV. Moreover, the deep level peak around 2.5eV is higher for Sample B which may be due to implantation and acceptor related defects. However, for Sample C, the deep level peaks are very weak compared to the near band edge peaks confirming that these peaks are mainly due to intrinsic defects and not related to acceptors. These results clearly show us a promising way to achieve p-type ZnO films using phosphorus doping.

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Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films

Cited by 25 publications

References 21 publications

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

Excitonic emission in heavily Ga-doped zinc oxide films grown on GaN

P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

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