2023
DOI: 10.1016/j.ssi.2023.116275
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Effect of partial pressure of oxygen, target current, and annealing on DC sputtered tungsten oxide (WO3) thin films for electrochromic applications

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Cited by 8 publications
(2 citation statements)
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“…Second, a higher in situ heating temperature conferred greater diffusion ability to the W and O atoms [8,20]. This enhanced diffusion allowed for a more regular rearrangement of atoms from the disordered amorphous WO 3 structure to a crystalline formation, leading to a slight increase in the thicknesses of the films for the WO 3 −100, WO 3 −150, WO 3 −200, WO 3 −250, and WO 3 −300 samples.…”
Section: Surface Morphology Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…Second, a higher in situ heating temperature conferred greater diffusion ability to the W and O atoms [8,20]. This enhanced diffusion allowed for a more regular rearrangement of atoms from the disordered amorphous WO 3 structure to a crystalline formation, leading to a slight increase in the thicknesses of the films for the WO 3 −100, WO 3 −150, WO 3 −200, WO 3 −250, and WO 3 −300 samples.…”
Section: Surface Morphology Analysismentioning
confidence: 99%
“…Benedict Wen-Cheun Au et al investigated the effect of different post-annealing temperatures on sol-gel spin-coated WO 3 films [6]. K. Naveen Kumar et al studied the effect of in situ heating and post-annealing processes on sputtered WO 3 films [8]. Mengying Wang et al focused on the chromaticity of complementary NiO//WO 3 electrochromic devices by magnetron sputtering [9].…”
Section: Introductionmentioning
confidence: 99%