Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications

Lin, Yan; Lien, Shui−Yang; Huang, Yung-Chuan; Wang, Chao-Chun; Liu, Chueh-Yang; Nautiyal, Asheesh; Wuu, Dong−Sing; Lee, Shuo-Jun

doi:10.1016/j.tsf.2012.07.070

Cited by 5 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is explained when light pass through the samples with such surface, light scattering could be greatly enhanced. 16 The effect of AZO film between FTO and p-type a-SiC:H layers improves V oc and FF for a high efficiency thin film solar cell. The efficiency enhancement was accomplished by the insertion of high work-function layers engineered in the interfaces to raise FF as well as V oc .…”

Section: College Of Information and Communicationmentioning

confidence: 99%

Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Park

Lee

Kim³

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

The effect of aluminum doped zinc oxide film used between a fluorine doped tin oxide layer and a hydrogenated amorphous silicon carbide layer to improve the open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cells. The efficiency enhancement was accomplished by the insertion of high work-function layers engineered in the interfaces to raise FF as well as Voc. Therefore, we were able to obtain the conversion efficiency of 10.34% at 16.14 mA/cm2 of the current density (Jsc) and 70.37% of FF.

show abstract

Section: College Of Information and Communicationmentioning

confidence: 99%

Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Park

Lee

Kim³

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…However, the electrical properties of pristine ZnO and SnO 2 may limit the use of this material. Therefore, there have been studies on ZnO and SnO 2 doping with using aluminum (AZO) [7], molybdenum (MZO) [8], gallium (GZO) [9], fluorine (FTO) [10], Indium (ITO), etc elements in order to enhance its electrical and optical properties. In addition to ZnO-based TCE films, indium tin oxide (ITO) film is also a commonly employed material as a TCE layer because of its low electrical resistivity (< 4 × 10 −4 Ω.cm) and high optical transmission (>80%) [11].…”

Section: Introductionmentioning

confidence: 99%

Enhanced photovoltaic performance of silicon-based solar cell through optimization of Ga-doped ZnO layer

Erkan,

Altuntepe,

Yazici

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

In the present study, the impact of deposition pressure and substrate temperature of Ga-doped Zinc Oxide (GZO) thin film and the photovoltaic performance of this structure as a transparent conductive oxide (TCE) layer in silicon-based solar cell were investigated. Implementing a single target of GZO, the structural, optical, and electrical properties of 350 nm thick GZO thin films with various deposition pressure (5 mTorr, 10 mTorr, 15 mTorr and 20 mTorr) at room temperature (RT) and substrate temperature (RT, 150 °C, 200 °C, 250 °C) at 15 mTorr deposition pressure were fabricated using RF magnetron sputtering technique. The aim here was to find out the GZO films with the optimum pressure and substrate temperature to incorporate them into solar cell as a TCE layer. The X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques were used to determine the structural properties of all samples. The optical transmission measurements were performed using spectroscopic Ellipsometer and the band gap values were calculated by Tauc plot using optical transmission data. In addition, the electrical characterization of the GZO samples were analyzed by the Van der Pauw method and Hall measurements. Finally, the most promising GZO thin film was determined based on the structural and optoelectrical characterization. The findings indicated that the XRD pattern of all the prepared films was dominated by (002) preferential orientation irrespective of the deposition pressure and substrate temperature. The AFM measurements showed that all the samples had a dense surface morphology regardless of the deposition pressures, but the surface morphology of the samples was clearly changed upon increasing substrate temperatures. The transmission values of the film did not significantly alter (∼82%) when the deposition pressures except for the substrate temperature of 200 °C (86%) were changed. The band gap values were calculated between 3.30 eV and 3.36 eV, which can be associated with enhancement of crystalline quality of the films. The lowest resistivity and the highest carrier concentration values belonged to the film fabricated at 15 mTorr@200 °C by 2.0 × 10−3 Ω.cm and 1.6 × 1020 cm−3, respectively. Both increasing the deposition pressure (up to 15 mTorr) and substrate temperature (up to 200 °C) contributes to improving the crystallite size, widening the optical band gap, lowering the resistivity, and increasing the carrier concentration. In order to evaluate and compare the effect of both deposition pressure and substrate temperature, Silicon-based solar cells were fabricated using the most promising layers (15 mTorr@RT, 15 mTorr@200 °C). The cell performance with the GZO thin film as a TCE layer showed that varying both the pressure and substrate temperature of the GZO film contributed to enhancing the solar cell parameters. Thus, the conversion efficiency increased from 9.24% to 12.6% with the sequential optimization of pressure and temperature. It can be concluded that the pressure applied during the deposition and substrate temperature had a significant impact on the properties of GZO thin films and its photovoltaic performance of solar cell used as TCE layer.

show abstract

“…Moreover, ZnO is non-toxic, inexpensive, abundant, and mechanically strong, which is important for the fabrication and operation of solar cells. Presently, many dopants, such as aluminium (Al) [8,9], gallium (Ga) [2,7], molybdenum (Mo) [10], fluorine (F) [6], tungsten (W) [11], niobium (Nb) [12], manganese (Mn) [13], indium (In) [1], titanium (Ti) [14], zirconium (Zr) [15], phosphorus (P) [16] and chlorine (Cl) [17], have been studied to improve the electrical and optical properties of ZnO thin films. Among these, Mo-doping seems to be successful and promising due to its smaller ionic radius of 0.62Å [18] (0.72Å [19]), as compared with corresponding values of Zn given in parentheses.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

Chen

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications

Cited by 5 publications

References 12 publications

Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells

Enhanced photovoltaic performance of silicon-based solar cell through optimization of Ga-doped ZnO layer

Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

Contact Info

Product

Resources

About