2006
DOI: 10.1016/j.surfcoat.2005.07.032
|View full text |Cite
|
Sign up to set email alerts
|

Effect of oxygen pressure on the microstructure and properties of the Al2O3–SiO2 thin films deposited by E-beam evaporation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
16
0
1

Year Published

2007
2007
2022
2022

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 40 publications
(24 citation statements)
references
References 8 publications
0
16
0
1
Order By: Relevance
“…Another approach is the use of electron beam evaporation. This method is technologically simple, and it provides relatively high deposition rates of about several micrometers per hour, and allows a wide range of process parameters [11][12][13]. The operating pressure for electron beam evaporation is normally less than 10 -2 Pa.…”
Section: Introductionmentioning
confidence: 99%
“…Another approach is the use of electron beam evaporation. This method is technologically simple, and it provides relatively high deposition rates of about several micrometers per hour, and allows a wide range of process parameters [11][12][13]. The operating pressure for electron beam evaporation is normally less than 10 -2 Pa.…”
Section: Introductionmentioning
confidence: 99%
“…The amorphous phase, which usually transforms into the γ phase of Al 2 O 3 during further annealing, is most often formed during the deposition of thin films on relatively cold substrates (25-250°C [23][24][25]) by means of electron evaporation. In turn, depending on the method of the preparation, the γ phase may remain thermally stable up to very high temperatures on the order of 1000-1100°C [7].…”
Section: Introductionmentioning
confidence: 99%
“…The results of these studies show that the routes of formation and phase transformation of the Al 2 O 3 based nanomateri als upon further annealing are characterized by excep tional diversity and depend on manifold factors: the initial precursor, the method of synthesis used and its conditions, the temperature and crystallographic ori entation of the substrate [17,18], etc. An amorphous phase, which is further transformed into the γ phase Al 2 O 3 upon annealing, is most often formed upon the deposition of thin films onto relatively cold substrates (25-250°C) [19][20][21] using evaporation by the elec tron beam. The γ phase in turn can remain thermally stable up to high temperatures of approximately 1000-1100°C [4].…”
Section: Introductionmentioning
confidence: 99%