Effect of oxygen on minority-carrier lifetime and recombination currents in Si1−<i>x</i>Ge<i>x</i> heterostructure devices

Ghani, T.; Hoyt, Judy L.; Noble, D. B.; Gibbons, J. F.; Turner, J. E.; Kamins, T. I.

doi:10.1063/1.104296

Cited by 34 publications

(8 citation statements)

References 8 publications

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“…The small recombination current can be the result of a low level of oxygen in the film. 30 The reverse current density is 1-2 orders of magnitude lower than that reported for the n-SiGe/p-Si diode. 14 The large series resistance ͑estimated at 6.7-9.7 k⍀͒ in the present diodes results from the front contact.…”

Section: Pn Junction Diodementioning

confidence: 85%

Rectifying characteristics of sputter-deposited SiGe diodes

Wang

Jiang

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe.

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Section: Pn Junction Diodementioning

confidence: 85%

Rectifying characteristics of sputter-deposited SiGe diodes

Wang

Jiang

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…High oxygen concentrations in SiGe layers were reported to dramatically reduce the minority-carrier lifetime. 34 The oxygen level in the Si buffer layers ͑grown at 900°C͒ is the same as that in the substrate and its measured value is set by the instrumental background ͑Fig. 4͒.…”

Section: B Composition Profilesmentioning

confidence: 99%

Epitaxial growth of Si1−x−yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Jing

Warren

Gailhanou

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High quality pseudomorphic Si1−yCy and Si1−x−yGexCy layers were grown on (100) Si between 530 and 650 °C by rapid thermal chemical vapor deposition in the SiH4/GeH4/SiH3CH3/H2 system. These layers contained up to 30 at. % Ge and up to 2.2 at. % C. Strain engineering was achieved. The strain could be tailored continuously from compressive (up to 2.2% in Si1−xGex) to tensile (up to −0.8% in Si1−yCy and −0.35% in Si1−x−yGexCy). The relationship between the process parameters and the physical properties of the layers was investigated. A process window for growing high quality layers was defined in terms of the partial pressures of SiH4 and SiH3CH3. It was found to be independent of Ge content, growth temperature, and growth rate. No carbon contamination was observed. No interference between Ge and C incorporation was observed. A model for the incorporation of substitutional C in the films which is based on the chemical reaction of SiH4 and SiH3CH3 on the surface is proposed.

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“…1,3 On the one hand, transient enhanced boron diffusion (TED) due to annealing of high-dose implant damage is strongly reduced in SiGe layers with high O content. 1,3 On the one hand, transient enhanced boron diffusion (TED) due to annealing of high-dose implant damage is strongly reduced in SiGe layers with high O content.…”

Section: Introductionmentioning

confidence: 99%