Effect of optical parameters on design of highly reflecting distributed Bragg reflectors based on compound semiconductors for space applications

Sharma, Rahul K; Gupta, Sudipto Das; Jatana, H. S.; Singh, Surinder

doi:10.1007/s12034-021-02356-y

Cited by 6 publications

(3 citation statements)

References 14 publications

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“…The relevant data above are also listed in Table S1. There is an abnormal reflection peak at 900 nm, which is caused by the AlGaAs/GaAs Bragg reflectors between the middle and bottom-cells [15][16][17][18] . The digital photograph in Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhanced light absorption using inverted triangular grooved cover glasses for triple-junction GaAs solar cell modules

Liu,

Qian,

et al. 2024

Advanced Fiber Laser Conference (AFL2023)

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Triple-junction GaAs solar cells are ideal for space energy applications, owing to its high efficiency, strong radiation resistance, and good high/low temperature performance, etc. Strategies such as lattice match, bandgap match, antireflective coating and electrode design, have been extensively studied to improve the solar cell performances. Considering the system level of the photovoltaic module, V-grooves on the cover glass were proposed to reduce the reflected light power caused by the metal gridlines. Based on the light refraction, the incident light will be guided by the V-grooves to bypass the gridlines and reach the absorb region of the solar cell. The V-grooves are fabricated by femtosecond laser scribing method with an optical alignment system. As a result, the efficiency of the solar cell module is increased from 29.01% to 29.3%. The V-grooved cover glass does not introduce heterogeneous materials such as silicone, oxides, etc., and therefore maintains good irradiation resistance and mechanical strength for space applications. triple-junction GaAs solar cells, metal gridline, femtosecond laser, V-groove, anti-reflective

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Section: Resultsmentioning

confidence: 99%

Enhanced light absorption using inverted triangular grooved cover glasses for triple-junction GaAs solar cell modules

Liu,

Qian,

et al. 2024

Advanced Fiber Laser Conference (AFL2023)

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“…Moreover, their high durability, long life and low toxicity make them widely favourable in optoelectronic devices [5] and power electronic industry [6]. These materials include binary compounds such as GaN, GaAs, InGa and AlN [7] and ternary compounds such as InGaN, AlGaN and InGaAs [8]. Such materials have become the basis for LED production.…”

Section: Introductionmentioning

confidence: 99%

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Selmane

Cheknane

Khemloul

et al. 2023

Preprint

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Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V nitride semiconductors are useful for LEDs in short-wavelength regions. A multiple quantum well (MQW LED), based on InGaN/GaN, is proposed. The structure involves GaN(n)/InxGa1−xN(i)/GaN(i)/AlGaN(p)/GaN(p), where GaN(n) and GaN(p) have different dopants to formulate the junction at which electric field occurs, InxGa1−xN(i) is a 3 nm-thick intrinsic quantum well with (x) as indium mole fraction, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Various characteristics such as current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, have been investigated. By controlling the InxGa1−xN(i) number of quantum wells and their indium mole fraction (0.18 or lower), all MQW LED characteristics including radiative recombination rate, needed current, spectral power and emitted light wavelength, are optimized. Increasing (x) value improves radiative recombination rate, spectral power and band gap with lower needed current. Devices with 6 quantum wells and x = 0.16 or 0.18 exhibit best performance. For power saving and environmental purposes, optimal mole ratio is x = 0.16.

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“…While, distributed Bragg reflectors (DBR) can be introduced into thin film solar cell to improve EQE when the MCDL is not long enough. [18][19][20][21] The main reason for this is that incident photons with a specific wavelength range can be absorbed twice by the base layer when DBR structure is placed under the back side of solar cell, and the material thickness can be designed thinner than that without DBR. Therefore, DBR is very suitable for GaInNAs solar cell due to the shorter MCDL, especially as it is prepared by MOVPE technology.…”

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confidence: 99%

High current of GaInNAs solar cell integrating distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

Zhang¹,

Yang²,

Li³

et al. 2021

Appl. Phys. Express

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GaInNAs junctions can be applied to the lattice-matched five-junction (5J) or six-junction (6J) solar cells to achieve ultra-high efficiency. In this work, a GaInNAs solar cell integrating distributed Bragg reflectors (DBR) is grown by metalorganic vapor phase epitaxy. According to external quantum efficiency measurements, the photocurrent can be improved by ∼20% due to DBR. Meanwhile, a short-circuit current (J sc ) of GaInNAs DBR-cell is obtained high as 13.78 mA cm −2 under the air mass (AM0) spectrum, which is completely satisfied the demand of 36%-efficiency 5J solar cell (∼ 12 mA cm −2 ). Finally, Dark-IV characteristics reveal that the introduction of DBR does not deteriorate GaInNAs quality.

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Effect of optical parameters on design of highly reflecting distributed Bragg reflectors based on compound semiconductors for space applications

Cited by 6 publications

References 14 publications

Enhanced light absorption using inverted triangular grooved cover glasses for triple-junction GaAs solar cell modules

Enhanced light absorption using inverted triangular grooved cover glasses for triple-junction GaAs solar cell modules

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

High current of GaInNAs solar cell integrating distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

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