Effect of O2 pressure during deposition on properties of rf-sputtered Sn-doped In2O3 films

Fan, John C. C.; Bachner, Frank J.; Foley, G.

doi:10.1063/1.89544

Cited by 133 publications

(47 citation statements)

References 12 publications

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“…51,52 In this work, we have used megnetron sputtering to fabricate the samples, and the resultant film is the smooth, continuous ITO layer, as characterized by the atomic force microscope (AFM) in Fig. 2(b).…”

Section: Resultsmentioning

confidence: 99%

Achromatic THz absorption of conductive nanofilms

Yin

Tian

et al. 2015

AIP Advances

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According to the theory, an ultrathin conductive film can achromatically dissipate electromagnetic waves with frequency ranging from radio to terahertz. A moderate absorption effect, which gives rise to a maximal absorbance of 50%, can be found if an impedance matching condition is satisfied. We have experimentally demonstrated the frequency-irrelevant, maximal absorption by employing a conductive nanofilm and launching terahertz waves at Brewster angle when the sheet (square) resistance of the film meets the impedance matching condition. In the entire terahertz spectral range covered by our experiments, the frequency-independent optical properties were consistent with the theoretical calculations.

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Section: Resultsmentioning

confidence: 99%

Achromatic THz absorption of conductive nanofilms

Yin

Tian

et al. 2015

AIP Advances

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“…The consequence of impurity/defect centers is the unacceptably large value of absorption observed in some sputtered and thermally evaporated layers 3 of ITO compared with those reported which have been fabricated by other techniques. 4,[8][9][10][11] A plot of two reported sets of data is shown in Fig. 2.…”

Section: Absorption By Defects and Impuritiesmentioning

confidence: 99%

“…Results from sputtered films (dc and magnetron) have already achieved this goal. 4,[8][9][10][11] Sputtering and vacuum evaporation are preferred techniques for film deposition because they are compatible with present semiconductor device technology.…”

Section: Absorption By Defects and Impuritiesmentioning

confidence: 99%

Transparent current spreading layers for optoelectronic devices

Porch

Morgan

Perks

et al. 2004

Journal of Applied Physics

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In this paper we develop a simple model based on a leaky transmission line to assess the electrical performance of transparent current spreading layers for application to surface light emitting diodes.Figures of merit suitable for device design are obtained and these are applied to a range of material systems reported in the literature. These calculations show that materials with electrical characteristics approaching ultimate performance limits can be achieved. Furthermore, calculations of the electromagnetic absorption of conducting layers show that further improvements should be possible by selecting materials with the highest possible majority carrier mobilities, which enable films of greater thickness to be grown while maintaining high transparency, leading to very low spreading layer resistances. Ways of achieving improved mobility are also discussed.

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“…The theory of In 2 O 3 explains the band structure of ITOs. Some scientists have investigated the electric structure of ITO films and In 2 O 3 (J. C. Fan, Bachner, & Foley, 1977). ITO's crystal structure hasn't discovered clearly up to now because it is complicated.…”

Section: Electrical Properties Of Ito Filmsmentioning

confidence: 99%

The Review of Semiconductor Gas Sensor for Nox Detcting

Niyat¹,

Hadi²,

Abadi³

2016

TOJDAC

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During the last century, many semiconductor gas sensors have been presented based on various materials and technologies to detect gas components. Many of them are made to support human's life in different ways. In the last years, the number of sensors which can detect various gas species has increased dramatically especially with respect to global issues of environment and earth atmosphere, the necessity of those gas sensors which can detect air pollutants such as NO x gases in environment is felt. They are essentially required in order to control the systems of combustion exhausted from industry, stationary facilities and automobiles. So it is necessary for the scientists to design and fabricate the gas sensors which are of low cost, selective, sensitive, and accurate especially in low level concentrations of target gases, easy to process and of high recovery and response time, good electrical properties, and above all tunable structure at the nano scale. In this sense, this paper has presented various classifications of gas sensors and various semiconductor oxides for NO x detecting and their technology to convey a comprehensive idea about the semiconductor metals as well as metal oxides for NO x detecting along with their characteristics, structures etc. in order to clarify the future road map towards on the semiconductor materials for NO x detecting. Keywords: sensor, NO x gases, semiconductor, metal oxides INTRODUCTIONIn the last few decades, many studies have been focused on the semiconducting metal oxides which are known as effective gas sensing materials especially for NO x detecting due to their electrical conductivities which are open to change greatly with the changes of atmosphere (K. J. Choi & Jang, 2010;Comini et al., 2009;Fine, Cavanagh, Afonja, & Binions, 2010;Franke, Koplin, & Simon, 2006; Kanan, El-Kadri, Abu-Yousef, & Kanan, 2009; G Korotcenkov & Cho, 2011;J.-H. Lee, 2009;Tricoli, Righettoni, & Teleki, 2010;Wetchakun et al., 2011). The sensing characteristics of such sensors can be optimized by controlling their morphology, surface to volume ratio, and electrical properties. The developments in nanotechnology, fabrication methods, and synthesis provide a suitable atmosphere to construct those sensors with their mentioned sensing characteristics easier.

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Effect of O2 pressure during deposition on properties of rf-sputtered Sn-doped In2O3 films

Cited by 133 publications

References 12 publications

Achromatic THz absorption of conductive nanofilms

Achromatic THz absorption of conductive nanofilms

Transparent current spreading layers for optoelectronic devices

The Review of Semiconductor Gas Sensor for Nox Detcting

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