Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Liu, P.; Chen, T. P.; Liu, Z.; Tan, Chuan Seng; Leong, K. C.

doi:10.1016/j.tsf.2013.07.084

Cited by 21 publications

(14 citation statements)

References 17 publications

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“…The results showed that IGZO layers annealed in N 2 had a higher concentration of oxygen vacancies. The electrical properties and TFT characteristics of a‐IGZO films synthesized by RF sputtering with O 2 plasma immersion were studied in . The effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction in oxygen‐related defects in the IGZO films.…”

Section: Introductionmentioning

confidence: 99%

Effective Improvements in Microstructure and Electrical Properties of the IGZO Films by Sputtering Angles

Chung

Lin

2016

Int J Applied Ceramic Tech

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Indium gallium zinc oxide (IGZO)/poly(ethylene terephthalate) (PET) specimens were prepared under inclination angles of 0°, 15°, 30°, 45°, and 60°. The film thickness, top and lateral surface morphologies, and chemical compositions were investigated by X‐ray diffraction (XRD) patterns and X‐ray photoelectron spectroscopy (Ga2p, Ga3d, In3d, Zn2p, and O1s). The intensity ratio (IR) is defined as the ratio of the InGaO3(ZnO)3 peak value to the sum of the peak values of InGaO3(ZnO)3 and InGaZnO4. Decompositions of O1s and Ga3d provide the Gaussian‐like profiles of Ga‐Ga, In4d, Ga‐O, O1, O2, and O3. The ratio of the O2 peak intensity (PI) to the sum of the O1 and O2 intensities, termed IRO2, was used as an indicator of oxygen‐vacancy defects in the five specimens. An increase in the inclination angle significantly reduced surface roughness. An increase in IRO2, due to inclination angle increase, elevated the carrier concentration, which is consistent with the increases in O2 PI often being advantageous for carrier mobility reductions. Moreover, a high IRO2 value is unfavorable for increasing film's adhesive strength to the PET substrate.

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Section: Introductionmentioning

confidence: 99%

Effective Improvements in Microstructure and Electrical Properties of the IGZO Films by Sputtering Angles

Chung

Lin

2016

Int J Applied Ceramic Tech

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“…As pointed out early, O 2 plasma treatment reduces oxygen vacancies in IGZO surface layer. 191 The impact of the reduction in oxygen vacancies in a thinner IGZO layer would be more significant than that in a thicker IGZO film with the same amount of O 2 plasma treatment on the surface. The CFs connecting the top and bottom electrodes are more difficult to formed in a thinner IGZO layer due to the reduction of oxygen vacancies in the surface region.…”

Section: Resultsmentioning

confidence: 99%

“…The O 2 plasma is generated by exciting the oxygen gas (O 2 flow rate = 820 ml/min, pressure = 1 mbar) at the frequency of 2.45GHz with the power of 800 W. In our previous study, it was found that O 2 plasma treatment can greatly increase the resistivity of the IGZO thin film as a result of the reduction in the concentration of the oxygen vacancies in the IGZO thin film. 191 The as-deposited IGZO thin film has a very low resistivity (5.6 × 10 -3 Ω▪cm); however, the O 2 plasma treatment for 75 s causes the resistivity increase to 1.9 × 10 -1 Ω▪cm, and the resistivity is extremely high (the resistivity is too high to be measured with a four-point probe.) after the plasma treatment of 10 minutes.…”

Section: Methodsmentioning

confidence: 99%

“…the electron concentration decreases from 1.3 × 10 21 cm -3 of the asdeposited film to 2.2 × 10 18 cm -3 after the O 2 plasma treatment of 75 s. The XPS measurement shows that the O 2 plasma treatment can greatly reduce the concentration of the oxygen vacancies which act as donors in the IGZO thin film. 191 With the O 2 plasma treatment, the resistance of the OFF state of the WORM device is very high such that the OFF-state current is very low, which is very useful to the operation of the WORM device.…”

Section: Methodsmentioning

confidence: 99%

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Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications

Liu¹

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It's very fortunate for me to have Prof. Chen Tu pei from Nanyang Technological University (NTU) as my PhD supervisor. I sincerely appreciate his patient guidance, continuously technical support and suggestions throughout my research work. His analytical skills and device physics knowledge have provided me an insightful understanding towards the completion of this PhD work. Whenever I encountered any problem in research, his invaluable advices and constantly encouragement would always get through it, it's a really fruitful journey in my PhD life under his guidance. I would like to sincerely thank to SP program from GLOBALFOUNDRIES Singapore PTE LTD for the financial support. Special thanks to Dr. Lap Chan and Mr. Leong Kam Chew from GLOBALFOUNDRIES Singapore PTE LTD for their advices and technical training lessons conducted in the weekly meeting. My appreciation to my mentor (Dr. Yang Jian Bo) in GLOBALFOUNDRIES Singapore PTE LTD for his help of the collaborating with TD department engineers and arranging the Tool time. Many thanks to all technical staffs in Nanyang NanoFabrication Center (N2FC) Cleanroom 1 and Cleanroom 2 providing the various equipment for sample preparation and device fabrication, as well as NanoPhotonics lab for device characterization in School of Electronics Electrical Engineering (EEE). Their technical support and friendly help has allowed me run the project smoothly.

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“…Based on our previous study, O2 plasma treatment can cause the increase of the resistivity of the IGZO thin film [184]. As an n-type semiconductor material, the electrons in the IGZO thin film mainly origin from the interstitial metal ions and oxygen vacancies.…”

Section: Experiments and Device Fabricationmentioning

confidence: 96%

Device applications of transition metal oxide thin films

Li¹

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First and foremost, I would like to express my deepest gratitude to my supervisor, Associate Professor Chen Tupei, for his patient guidance, consistent support and encouragement throughout my Ph.D. journey in Nanyang Technological University. Without his inspiring ideas, invaluable discussions, and technical guidance, this thesis would not be completed. The rigorous attitude and enterprising spirit I learned from Prof. Chen benefit not only my study during the Ph.D. life, but also my future study and working. It is a great honor for me to be a Ph.D. student in Prof. Chen's group.

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Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Cited by 21 publications

References 17 publications

Effective Improvements in Microstructure and Electrical Properties of the IGZO Films by Sputtering Angles

Effective Improvements in Microstructure and Electrical Properties of the IGZO Films by Sputtering Angles

Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications

Device applications of transition metal oxide thin films

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