Effect of O2- migration in Pt/HfO2/Ti/Pt structure

Thammasack, Maxime; Micheli, Giovanni De; Gaillardon, Pierre-Emmanuel

doi:10.1007/s10832-017-0077-y

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…In the validation of eq , a kMC simulation of Pt/HfO 2 /Ti devices considers the more general case of V o 2+ filament species during the RESET as shown in Figure a. − V stop ranging from −1.2 to −2 V were simulated, and the number of oxygen vacancies ( n o ) versus V stop in Figure a revealed that n o remained constant at the beginning. However, when V stop is sufficient to overcome the oxide barrier, n o decreases linearly until it eventually saturates at a certain number.…”

Section: Kinetic Monte Carlo Simulation With Varying Oxygen Vacancy D...mentioning

confidence: 99%

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO₂-Based Resistive Random Access Memory Devices

Loy

Dananjaya

Chakrabarti

et al. 2020

ACS Appl. Electron. Mater.

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We report a switching model that directly explains the change in activation energy (E AC ) at different RESET stop voltages (V stop ) in HfO 2 -based resistive random access memory devices. The dependence of oxygen vacancy-driven conductive filaments (V o 2+ ) density (n D ) on V stop was validated by a kinetic Monte Carlo (kMC) simulation and hopping conduction mechanism. A wide operating range of temperatures from −40 to 175 °C is achieved with stable endurance of 100 ns short pulses and high retention of more than 10 years at 125 °C. Distinct exponentially increased multilevel high-resistance states are observed at increasing V stop and is attributed to the increase in E AC with V stop . The increase in E AC due to the increase in V stop and depletion of n D during RESET was explained using our proposed switching model. A kMC simulation further emphasizes this relation due to the depletion of V o 2+ during RESET, which was supported by the increase in trap-to-trap distance in the hopping conduction analysis.

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Section: Kinetic Monte Carlo Simulation With Varying Oxygen Vacancy D...mentioning

confidence: 99%

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO₂-Based Resistive Random Access Memory Devices

Loy

Dananjaya

Chakrabarti

et al. 2020

ACS Appl. Electron. Mater.

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“…A layer of t-SiO 2 can be integrated onto the back side of the PI substrate to prevent biofluid penetration from this direction. [6] Although many published reports describe the deposition of high-κ dielectrics (e.g., Al 2 O 3 , HfO 2 ) by ALD on noble metal surfaces (e.g., Au, Pt) for applications in energy storage, nano/microelectronics and other areas, [31][32][33][34][35][36][37][38][39][40] the underlying mechanisms are of interest due to the lack of naturally occurring hydroxyl groups on the surfaces of such metals. Formation of the initial growth interface during the ALD process can significantly affect the quality of the resulting films, of particular importance in demanding applications such those in biofluid barrier coatings.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin, High Capacitance Capping Layers for Silicon Electronics with Conductive Interconnects in Flexible, Long‐Lived Bioimplants

Chiang

et al. 2019

Adv Materials Technologies

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Bioimplants that incorporate active electronic components at the tissue interface rely critically on materials that are biocompatible, impermeable to biofluids, and capable of intimate electrical coupling for high‐quality, chronically stable operation in vivo. This study reports a materials strategy that combines silicon nanomembranes, thermally grown layers of SiO2 and ultrathin capping structures in materials with high dielectric constants as the basis for flexible and implantable electronics with high performance capabilities in electrophysiological mapping. Accelerated soak tests at elevated temperatures and results of theoretical modeling indicate that appropriately designed capping layers can effectively limit biofluid penetration and dramatically extend the lifetimes of the underlying electronic materials when immersed in simulated biofluids. Demonstration of these approaches with actively multiplexed, amplified systems that incorporate more than 100 transistors in thin, flexible platforms highlights the key capabilities and the favorable scaling properties. These results offer an effective encapsulation approach for long‐lived bioelectronic systems with broad potential for applications in biomedical research and clinical practice.

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“…Lian, Wang, Yan, Yang and Miao newly propose a criteria for selecting high-performance memristor materials based on the statistical results and the temperature evolution of conductive filaments with examples of TaO x , HfO 2 and NiO as resistive switching materials [8]. Hafnium oxide, an important memory material in the electronics industry, is studied in its oxygen ionic migration and switching characteristics by Thammasack, De Micheli and Gaillardon [9]. The role of Ti interlayers on the switching dynamics is the focus of their work.…”

Section: Emulation Of Neural Network By Redox-based Resistivementioning

confidence: 99%

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

2017

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Emulation of neural networks by redox-based ResistiveRandom Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards computation with neuromorphic algorithms. ReRAMs are regarded as conceptually new building units in modern nanoelectronics, finding application not only as a memory, but also as selectors, for logic operations and neuromorphic computing circuits beyond the von Neumann concept, being capable of bio-inspired cognitive functions, such as machine learning and pattern recognition. The information is saved in ReRAMs as particular resistances of the devices adjustable by voltage stimuli, where in the most simple case the high resistive state represents the Boolean 0 and the low resistive state -the Boolean 1. The devices show outstanding potential for scaling down to the atomic level, integration, low-power consumption, sub-nanosecond operation time range and digital and/or analog volatile and/or non-volatile information storage. In these devices, the switching relies on redox reactions and mixed ionic-electronic transport at the nanoscale, in cells/devices of the type MEM (metal-electrolytemetal) or MIM (metal-insulator-metal) where oxides and higher chalcogenides are typically used as ion conducting materials. ReRAM devices are operated at extremely harsh conditions characterized by high electric fields (up to1 0 8 V/m) and extremely high current densities in the range above MA/cm 2 and show perspective for future memory and neuromorphic computing devices.In this special issue of the Journal of Electroceramics, we present a selection of invited and contributed articles, which focus on both materials and device aspects. These papers span a wide range reviewing and proposing materials for the switching oxides, including investigation of the switching mechanism, highlighting the involved nanionic processes and highlighting novel operation principles. We are fortunate to have attracted 16 high quality and timely contributions to this issue composed of invited reviews highlighting either material, probing or device aspects on the theme of this special issue.An invited review on resistive switching devices and their applications as mixed signal analog-digital neuromorphic computing architectures and other application fields by Zidan, Chen, Indiveri and Lu leads off the special issue [1]. In this paper, the development and opportunities of memristive switching devices for replacing classic binary transistors and potential computing architectures are discussed by the authors. Resistive switches offer the intrinsic ability of ready processing in 3D memory array architectures with exciting potential for mass storage applications and handling of big data. In a joint contribution lead by Chen et al. colleagues from Stanford,

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Effect of O2- migration in Pt/HfO2/Ti/Pt structure

Cited by 6 publications

References 15 publications

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO₂-Based Resistive Random Access Memory Devices

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO₂-Based Resistive Random Access Memory Devices

Ultrathin, High Capacitance Capping Layers for Silicon Electronics with Conductive Interconnects in Flexible, Long‐Lived Bioimplants

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

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Effect of O2- migration in Pt/HfO2/Ti/Pt structure

Cited by 6 publications

References 15 publications

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

Ultrathin, High Capacitance Capping Layers for Silicon Electronics with Conductive Interconnects in Flexible, Long‐Lived Bioimplants

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

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Product

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Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO₂-Based Resistive Random Access Memory Devices

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO₂-Based Resistive Random Access Memory Devices