Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

Aihara, Taketo; Fukuyama, Atsuhiko; Suzuki, Hisao; Fujii, Hiromasa; Sugiyama, Masakazu; Nakano, Yoshiaki; Ikari, Tetsuo

doi:10.1063/1.4913593

Cited by 7 publications

(5 citation statements)

References 21 publications

(30 reference statements)

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“…E f, i can be expressed as followswhere E equil, i is the Fermi-level in the state of thermal equilibrium and n intr, i is the intrinsic areal electron density in the i th DWELL. To calculate τ th , we used the thermionic emission model of QWs described as 34,35 where m * is the effective electron mass and E AlGaAs is the CB edge of Al 0.3 Ga 0.7 As. We used 6.1 × 10 −32 kg for m * .…”

Section: Resultsmentioning

confidence: 99%

Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure

Asahi

Kaizu

2019

Sci Rep

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We studied the dynamics of electrons generated by two-step photoexcitation in an intermediate-band solar cell (IBSC) comprising InAs/GaAs/Al 0.3 Ga 0.7 As dot-in-well (DWELL) structure using time-resolved photocurrent (TRPC) measurement. The examined IBSC exhibited considerably slower photocurrent decay than a conventional InAs/GaAs quantum dot IBSC, which is due to the extraordinarily long-lived electrons in the DWELL. In order to retrieve the electron lifetime from the decay profile, we developed a model reproducing the observed decay and performed parameter fitting. The fitting results indicate that the electron lifetime in the DWELL is approximately 30 μs. In the two-colour excitation TRPC measurement, we found that an additional infrared (IR) light accelerates the photocurrent decay while the photocurrent increases by approximately 3%, because the additional IR light causes two-step photoexcitation of electrons in the DWELLs towards the conduction band. Furthermore, we demonstrated that the open-circuit voltage increases with increasing of the contribution of the second IR excitation process.

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Section: Resultsmentioning

confidence: 99%

Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure

Asahi

Kaizu

2019

Sci Rep

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“…Secondly, the confined energy level of the potential barrier height increases with increasing phosphorus content so that more electrons are trapped in the InGaAs wells. The radiative recombination of photoexcited carriers increases as a result of the reduced thermal escape probability of an electron from the quantum well with an increased potential barrier height, 40 even though a large number of defects emerge at the hetero-interface of InGaAs and GaAsP owing to the high phosphorus content. Therefore, the PL intensity increases with increasing phosphorus content in the GaAsP quantum barrier.…”

Section: Resultsmentioning

confidence: 99%

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Dong

Sun

et al. 2016

Phys. Chem. Chem. Phys.

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The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth. The surface morphology and roughness were characterized by atomic force microscopy, which indicates the variation law of surface roughness, terrace width and uniformity with increasing phosphorus content, owing to strain accumulation. Moreover, the defect generation and structural disorder of the multi-quantum wells were investigated by Raman spectroscopy. The optical properties of the multi-quantum wells were characterized by photoluminescence, which shows that the spectral intensity increases as the phosphorus content increases. The results suggest that more electrons are well bound in InGaAs because of the high potential barrier. Finally, the mechanism of the effect of the height of the potential barrier on laser performance was proposed on the basis of simulation calculations and experimental results.

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“…38 InGaAsP thin layers decrease connement ability of barriers so that the probabilities of the photoexcited carrier escape from the quantum well and the nonradiative carrier recombination increased. 39,40 The observed characteristics of I-V curves are shown in Fig. 7 for the three samples grown at different temperatures.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

Dong

Sun

et al. 2015

RSC Adv.

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Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

Cited by 7 publications

References 21 publications

Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure

Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

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