Effect of nucleating layers on the soft magnetic properties of multilayer permalloy films

Grimes, Craig A.

doi:10.1063/1.361733

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…Si has been used as a seed layer for NiFe layers, 8,9 with good effects. Figure 3͑a͒ shows data from IrMn ''top'' spin valves grown on Si underlayers.…”

Section: Discussionmentioning

confidence: 99%

IrMn spin valves using Si layers

Carey

Thompson

et al. 2002

Journal of Applied Physics

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Effect of Ir-Mn composition on exchange bias and thermal stability of spin valves with nano-oxide layers Enhancement of exchange bias in Mn-Ir/Co-Fe based spin valves with an ultrathin Cu underlayer and in situ Mn-Ir surface modification Thin silicon layers can be used to good effect in spin valve sensors. Si underlayers increase the ⌬R/R from 7.1% to 8.8% in top spin valves, and 6% to 7.8% for bottom spin valves. This is accompanied by a decrease in sheet resistance and the exchange anisotropy field. These results suggest that films grown on Si have larger grains than those with Ru seed layers. Si atoms are efficient as scattering sites, reducing ⌬R/R and increasing the sheet resistance when placed in active layers. This can be used to improve the properties of antiparallel-pinned spin valves.

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“…Si has been used as a seed layer for NiFe layers, 8,9 with good effects. Figure 3͑a͒ shows data from IrMn ''top'' spin valves grown on Si underlayers.…”

Section: Discussionmentioning

confidence: 99%

IrMn spin valves using Si layers

Carey

Thompson

et al. 2002

Journal of Applied Physics

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“…For an optimal tuning of the frequency resonance, several solutions have been discussed in the literature to decrease the anisotropy field with respect to a significant increase of the permeability. Existing solutions using an undercoat [1], a spacer layer in a multilayer Permalloy thin films [3], or a post-annealing after deposition [4] have been reported.…”

Section: Introductionmentioning

confidence: 99%

Frequency-dependent complex permeability in Zr-substituted permalloy thin films

Youssef¹,

Jacquart

Vukadinovic

2002

IEEE Trans. Magn.

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In this work, we investigate Zr substitution in Permalloy Ni 80 Fe 20 thin films in order to control the magnetic properties and then to tune the resonance frequency at lower values with high permeability levels. The structural transition from a crystalline to an amorphous phase, saturation induction, in-plane anisotropy, electrical resistivity, and frequency-dependent permeability are studied for the Zr content ranging from 0 to 17% at. The high-frequency permeability of these (Ni 80 Fe 20 ) 1 Zr films is first measured in the 0.1-3-GHz range using a permeameter. Assuming a gyroresonance mechanism, the frequency-dependence of the permeability is studied as a function of the magnetization, anisotropy field, and damping parameter deduced from ferromagnetic resonance characterizations. For a Zr concentration of 17%, a resistivity of 260 cm is obtained as well as very soft properties ( 0 5 Oe). We also show that the permeability is drastically affected by the Zr substitution with a significant shift of the resonance frequency from 600 to 300 MHz, which correlates with the decrease of the saturation induction and a very low anisotropy.

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“…A 100 nm Si 3 N 4 undercoat separated the substrate and first permalloy layer. 7 The silicon nitride layers were deposited by reactive sputtering from a silicon target in a nitrogen-rich environment.…”

Section: Introductionmentioning

confidence: 99%