Effect of nonstoichiometric defects and Cr ions on the photoconductivity of Bi12SiO20 crystals

Panchenko, T. V.; Karpova, L. M.

doi:10.15421/332005

Cited by 1 publication

(4 citation statements)

References 3 publications

(5 reference statements)

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“…[17] It has been reported that the Cr ion replaces the Si 4þ tetrahedral site but may occur in both Cr 4þ and Cr 5þ states. [18,19] The ionic radii of Cr 4þ and Cr 5þ in tetrahedral site are 55 and 48.5 pm, respectively. It replaces Si 4þ which has lower ionic radii of 40 pm in the tetrahedral site.…”

Section: Crystal Structurementioning

confidence: 99%

“…On close examination of the transmission spectra, it appears that this may be attributed to the defect-related absorption band close to the band edge, possibly originated from the charge imbalance when Cr in trivalent state replaces Si 4þ . [18,19] 3.6. Refractive Index…”

Section: Emission Characteristicsmentioning

confidence: 99%

“…In literature, there are reports on the growth of Cr-doped BSO crystal and investigations on the photorefractive effect, dielectric property, optical activity, Faraday effect, etc. [15][16][17][18][19][20][21][22][23][24] For the growth of the crystal, Czochralski technique has been used as BSO is a congruently melting compound. [25,26] It is known that the devices mentioned earlier require crystals with a low dislocation density and high optical homogeneity.…”

mentioning

confidence: 99%

“…[7,8] It has been reported that the photorefractive property of BSO is enhanced significantly on doping with metals like Cr, Fe, Mg, Ru, etc. [8,[15][16][17][18][19][20][21][22][23][24][25][26][27] Though most of these dopants make material sensitive to photorefraction in the visible region, especially around 500 nm, that is, 2.5 eV, practical feasibility prefers the region near the infrared (1.5À2 eV), mainly because of the availability of compact laser diodes in this region. [28] Cr doping shifts the photorefractive sensitivity of BSO to the near-infrared region and therefore makes it a potential material for applications like optical image processing, holographic interferometry, optical storage, and phase conjugation.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Crystal Interface Control at Low Thermal Gradient and Investigation of the Effect of Cr on the Crystal Structure and Optical Properties of Bismuth Silicate

Bhaumik

Viswanathan

Bhatt

et al. 2021

Physica Status Solidi (b)

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Sillenite structure crystals (general composition Bi 12 XO 20 , X ¼ Si, Ge, and Ti with space group I23) posses a number of properties important for practical applications. [1,2] They are characterized by XO 4 tetrahedra located at the center and corners of its cubic unit cell. These XO 4 tetrahedra are linked with stereochemically active 6s 2 lone electron pair of Bi 3þ via BiO 5 octahedra. [3][4][5] This, along with the absence of inversion symmetry, is the source of outstanding electrical and optical properties suitable for photorefractive applications. [1][2][3][4][5] Among sillenites, bismuth silicate (Bi 12 SiO 20 , BSO) is a technologically important material as it exhibits large electro-optic and photoconductive effects, which make it suitable for optical switches, optics-based electric field sensors, holographic storage, and photorefractive devices. [6][7][8][9][10][11][12][13][14] It is used for two-wave mixing, four-wave mixing, phase conjugation, real-time holography, optical data storage, optical computing, and electro-optical modulation. [7,8] It has been reported that the photorefractive property of BSO is enhanced significantly on doping with metals like Cr, Fe, Mg, Ru, etc. [8,[15][16][17][18][19][20][21][22][23][24][25][26][27] Though most of these dopants make material sensitive to photorefraction in the visible region, especially around 500 nm, that is, 2.5 eV, practical feasibility prefers the region near the infrared (1.5À2 eV), mainly because of the availability of compact laser diodes in this region. [28] Cr doping shifts the photorefractive sensitivity of BSO to the near-infrared region and therefore makes it a potential material for applications like optical image processing, holographic interferometry, optical storage, and phase conjugation. In literature, there are reports on the growth of Cr-doped BSO crystal and investigations on the photorefractive effect, dielectric property, optical activity, Faraday effect, etc. [15][16][17][18][19][20][21][22][23][24] For the growth of the crystal, Czochralski technique has been used as BSO is a congruently melting compound. [25,26] It is known that the devices mentioned earlier require crystals with a low dislocation density and high optical homogeneity. [29] One of the important aspects of growth of crystals having low dislocation density is to grow the crystal with a flat-ish crystalÀmelt interface. [26] A few studies have been reported on undoped BSO for relatively higher thermal gradient. [30,31] However, to obtain large-sized good quality crystal of BSO, a lower thermal gradient is favorable. [32] In view of this, one of the objectives of the work is investigate the effect of the growth condition on the interface shape control of the Cr:BSO crystal when grown along 〈110〉 in the lower axial

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Section: Crystal Structurementioning

confidence: 99%

Section: Emission Characteristicsmentioning

confidence: 99%