Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

Maksimov, M. V.; Sizov, D. S.; Макаров, А. А.; Kayander, I. N.; Asryan, Levon V.; Zhukov, A. E.; Ustinov, V. I.; Cherkashin, Nikolay; Берт, Н. А.; Ledentsov, N. N.; Bimberg, D.

doi:10.1134/1.1808830

Cited by 14 publications

(15 citation statements)

References 10 publications

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“…By their very nature, nanocrystals have a very high surface‐to‐volume ratio. Regardless of the manufacturing technique, nanocrystal structures contain numerous defects, both within the nanocrystal and at the interface with the matrix material 104. The point defects act as nonradiative recombination sites.…”

Section: Research and Development Needs In The Synthesis And Procementioning

confidence: 99%

Semiconductor‐Nanocrystals‐Based White Light‐Emitting Diodes

Dai

Duty

2010

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236

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In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white light-emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

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Section: Research and Development Needs In The Synthesis And Procementioning

confidence: 99%

Semiconductor‐Nanocrystals‐Based White Light‐Emitting Diodes

Dai

Duty

2010

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236

169

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“…These oversized QDs are typical of InAs QD ensembles, and are known to be a cause of nonradiative recombination, as they are plastically relaxed. 23 Remarkably, these oversized QDs have not been detected in our QD ensembles exposed to moderate Sb pressures ͓Fig. 1͑a͒ compared to Fig.…”

Section: A Ensemble Characterization: Afm Pl and Rheedmentioning

confidence: 68%

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Taboada¹,

Sanchez

Beltrán

et al. 2010

Phys. Rev. B

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We present experimental evidence of Sb incorporation inside InAs/GaAs͑001͒ quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

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“…However, adopting this unconventional growth regime to incorporate Bi into the host GaAs lattice creates structural defects which behave as nonradiative centers such as native point defects and clusters [25] affecting their optical efficiency. It is well-known that post-growth This is the author's peer reviewed, accepted manuscript.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

Alghamdi

Gordo

Schmidbauer

et al. 2020

Journal of Applied Physics

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The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1-xBix/GaAs single quantum wells (SQW) grown on (001) and (311)B substrates by molecular beam epitaxy (MBE) was investigated. The structural properties were investigated by high-resolution X-ray diffraction (HR-XRD) and Transmission Electron Microscopy (TEM). The Bi concentration profiles were determined by simulating the HR-XRD 2θ-ω scans using dynamical scattering theory to estimate the Bi content, lattice coherence and quality of the interfaces. The Bi composition was found to be similar for both samples grown on (001) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi QW layer but extends out of the GaAsBi QW towards the GaAs barrier. Photoluminescence (PL) measurements were performed as a function of temperature and laser power for samples with a nominal Bi composition of 3%. PL spectra showed that (001) and (311)B samples have different peak energies at 1.23 eV and 1.26 eV, respectively, at 10 K. After RTA at 300 o C for 2 mins, the PL intensity of (311)B and (001) samples was enhanced by a factor of ~2.5 and 1.75, respectively. However, for the (001) and (311)B FA samples an enhancement of the PL intensity by a factor of only 1.5 times could be

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Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

Cited by 14 publications

References 10 publications

Semiconductor‐Nanocrystals‐Based White Light‐Emitting Diodes

Semiconductor‐Nanocrystals‐Based White Light‐Emitting Diodes

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

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