Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn

Hoglund, David E.; Aziz, Michael J.; Stiffler, S. R.; Thompson, Michael O.; Tsao, Jeffrey Y.; Peercy, P. S.

doi:10.1016/0022-0248(91)90164-z

Cited by 46 publications

(12 citation statements)

References 21 publications

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“…Several dilute Si-and Al-binary alloys have been used for these measurements [28,29,30,31,32]. The experimental data was reasonably good agreement with the solute trapping model as shown in Figure 2.17 [28].…”

Section: Critical Experiments and Models Of Rapid Solidificationsupporting

confidence: 57%

Phase-field investigation on the non-equilibrium interface dynamics of rapid alloy solidification

Choi

2011

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Section: Critical Experiments and Models Of Rapid Solidificationsupporting

confidence: 57%

Phase-field investigation on the non-equilibrium interface dynamics of rapid alloy solidification

Choi

2011

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“…31 Transition metals leading to surface segregation at low concentrations and cellular breakdown at higher concentrations, as observed here, is consistent with previous investigations into PLM of transition metals ion implanted in Si. 14,15,20,28,32,33 As an example of typical cellular breakdown morphology, Figure 1 Table I are based on the maximum TABLE I. Summary of results and key experimental quantities for Si implanted with transition metals and melted with a XeCl þ excimer laser.…”

Section: Resultsmentioning

confidence: 99%

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht¹,

Smith²,

Charnvanichborikarn³

et al. 2013

Journal of Applied Physics

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We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown.

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“…The standard model of cellular breakdown during pulsedlaser melting invokes the formation of lateral (i.e., parallel to the solid-liquid interface) variations in impurity concentration within the melt [31][32][33][34] . The more impurity-rich regions serve to locally retard the progress of the solidification front through the mechanism of constitutional supercooling, leading to "troughs" of molten, impurity-rich material surrounded by solid crystal.…”

Section: Cellular Breakdown Dynamicsmentioning

confidence: 99%

Single‐Phase Filamentary Cellular Breakdown Via Laser‐Induced Solute Segregation

Akey

Recht

Williams

et al. 2015

Adv Funct Materials

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Nanosecond melting and quenching of materials offers a pathway to novel structures with unusual properties. Impurity-rich silicon processed using nanosecond-pulsed-laser-melting is known to produce nanoscale features in a process referred to as "cellular breakdown" due to destabilization of the planar liquid/solid interface. Here, we apply atom probe tomography combined with electron microscopy to show that the morphology of cellular breakdown in these materials is significantly more complex than previously documented. We observe breakdown into a complex, branching filamentary structure topped by a few nm of a cell-like layer. Singlephase diamond cubic silicon highly supersaturated with at least 10% atomic Co and no detectable silicides is reported within these filaments. In addition, the unprecedented spatio-chemical accuracy of the atom probe allows us to investigate nanosecond formation dynamics of this 2 complex material. Previously-reported properties of these materials can now be reconsidered in light of their true composition, and this class of inhomogeneous metastable alloys in silicon can be explored with confidence.

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Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn

Cited by 46 publications

References 21 publications

Phase-field investigation on the non-equilibrium interface dynamics of rapid alloy solidification

Phase-field investigation on the non-equilibrium interface dynamics of rapid alloy solidification

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Single‐Phase Filamentary Cellular Breakdown Via Laser‐Induced Solute Segregation

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