Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate

Chen, Shih-Fan; Wang, Shea–Jue; Yang, Tung‐Han; Yang, Zhaoqi; Bor, Hui‐Yun; Wei, Chao‐Nan

doi:10.1016/j.ceramint.2017.06.122

Cited by 10 publications

(13 citation statements)

References 17 publications

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“…Furthermore, the surface roughness of the TaN film, as measured by atomic force microscopy, has been shown to slightly increase with N 2 flow rate. 49 The increased surface roughness will increase the phonon scattering rate at the interface, especially for phonons with long wavelengths, resulting in the increase in TBR. This further indicates the importance of adhesion between TaN and SiO 2 in decreasing TBR, which dominates over the role of surface roughness in increasing TBR.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, it can be concluded that the increase in N atomic concentration improves the adhesion between TaN and SiO 2 , resulting in the decrease of TBR. Furthermore, the surface roughness of the TaN film, as measured by atomic force microscopy, has been shown to slightly increase with N 2 flow rate . The increased surface roughness will increase the phonon scattering rate at the interface, especially for phonons with long wavelengths, resulting in the increase in TBR.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Zhan

Oda

et al. 2020

ACS Appl. Mater. Interfaces

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Temperature increase in the continuously narrowing interconnects accelerates the performance and reliability degradation of very large scale integration (VLSI). Thermal boundary resistance (TBR) between an interconnect metal and dielectric interlayer has been neglected or treated approximately in conventional thermal analyses, resulting in significant uncertainties in performance and reliability. In this study, we investigated the effects of TBR between an interconnect metal and dielectric interlayer on temperature increase of Cu, Co, and Ru interconnects in deeply scaled VLSI. Results indicate that the measured TBR is significantly higher than the values predicted by the diffuse mismatch model and varies widely from 1 × 10 −8 to 1 × 10 −7 m 2 K W −1 depending on the liner/barrier layer used. Finite element method simulations show that such a high TBR can cause a temperature increase of hundreds of degrees in the future VLSI interconnect. Characterization of interface properties shows the significant importance of interdiffusion and adhesion in TBR. For future advanced interconnects, Ru is better than Co for heat dissipation in terms of TBR. This study provides a guideline for the thermal management in deeply scaled VLSI.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Zhan

Oda

et al. 2020

ACS Appl. Mater. Interfaces

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“…This is a desirable composition as, during deposition, it tends to react with the Si component of an ILD to form TaSi x N y and thereby ensures good liner adhesion and even better electromigration barrier properties, compared to stoichiometric TaN films . In addition, Ta-rich films have a lower resistivity than stoichiometric films; therefore, if any is present between metal layers, electrical resistance is minimized. , Growth rates were similar between TBTDMT and PDMAT ranging from 0.47 to 0.62 Å/cycle. ALD process conditions were determined by varying precursor pulse duration from 0.5 to 3.0 s, while all other ALD parameters were held constant and film growth was measured using cross-sectional SEM after 200 growth cycles (Figure S3).…”

Section: Resultsmentioning

confidence: 92%

Area-Selective Deposition of Tantalum Nitride with Polymerizable Monolayers: From Liquid to Vapor Phase Inhibitors

et al. 2022

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Area-selective depositions (ASDs) exploit surface reactivity differences to deposit a material on a desired growth surface. This chemically driven process produces a reflection of the prepattern, commonly, through the use of either atomic layer deposition (ALD) or chemical vapor deposition (CVD). The ASD of TaN may offer significant benefits in device fabrication. For instance, in silicon technologies, this offers the ability to lower the resistivity between metal interconnect levels and therefore to reduce stage delay (RC delay). However, the deposition of TaN thin films in an area-selective manner is challenging due to the temperature requirements for a high-quality ALD film, which may exceed the thermal stability of typical organic surface modifications. We report on the synthesis of an organic inhibitor that incorporates a thermal/photoreactive diyne moiety to enable cross-linking of the inhibitor film and subsequent use in a selective TaN process, which was maintained over a large process window, during the 300 °C TaN ALD process. On patterned substrates, up to 3.8 nm of a TaN film could be deposited on SiN or mesoporous SiCOH without detectable Ta amounts on either a Cu or W surface. The same concept of cross-linking the inhibiting layer was also applied to a reactive vapor-phase inhibitor, propargylamine, found to inhibit TaN, though with a narrower process window (on blanket films). On via patterns, this selective TaN process was achieved but exhibits a distinct tapered profile. The methods described demonstrate the compatibility of several reactive inhibitors to enable the selective deposition of TaN at an ALD temperature compatible with many device fabrication schemes.

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“…Among them, there are quite a few studies on how the N 2 flow or N 2 /Ar flow rate ratio and the N 2 /(N 2 + Ar) partial pressure ratio affect the properties of TaN film. Chen et al [25] used a magnetron sputtering low-power radio frequency deposition method with variable nitrogen flow rate to deposit TaN x barrier layers on silicon. They found that as the N 2 flow rate increases, the surface roughness of the deposited TaN x film is slightly increased, and the amorphous structure of TaN x is formed with good thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Rasadujjaman

Wang

et al. 2021

Coatings

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

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Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate

Cited by 10 publications

References 17 publications

Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI

Area-Selective Deposition of Tantalum Nitride with Polymerizable Monolayers: From Liquid to Vapor Phase Inhibitors

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

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