Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

Wong, Yuen Yee; Huang, Wei; Trinh, Hai Dang; Yang, Tung Sheng; Chang, Jei Wen; Chen, Micheal; Chang, Edward Yi

doi:10.1007/s11664-012-2150-2

Cited by 6 publications

(2 citation statements)

References 18 publications

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“…The same phenomenon was also observed on a regrown AlGaN/GaN structure with a parasitic conduction path deep below the 2DEG channel. 21) In contrast, both samples B and C pinched off well, as shown in Figs. 4(b) and 4(c), respectively.…”

mentioning

confidence: 89%

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Wong

Chang

Huang

et al. 2014

Appl. Phys. Express

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with different initial GaN growth modes were prepared on AlN/sapphire substrates. Secondary ion mass spectroscopy and Hall effect measurements confirmed that a highly conductive n-type region was generated at the GaN/AlN buffer interface during the three-dimensional to two-dimensional (3D–2D) growth mode transition. This n-type region was created by oxygen impurity incorporation during the 3D–2D growth mode transition, and its thickness increased with the transition time. The existence of this n-type conduction path not only changed the material properties but also degraded the device performance of HEMTs.

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mentioning

confidence: 89%

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Wong

Chang

Huang

et al. 2014

Appl. Phys. Express

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“…Subjecting the template surface to a long high-power N plasma treatment has been shown to decompose the impurityrich layers of the template and improve buffer breakdown voltage [60]. However, the N plasma treatment may also introduce roughness that is not easily recovered during GaN regrowth.…”

Section: Homoepitaxymentioning

confidence: 99%

Molecular beam epitaxy for high-performance Ga-face GaN electron devices

Kaun

Wong

Mishra

et al. 2013

Semicond. Sci. Technol.

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Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT performance steadily improved, mainly through the optimization of device fabrication processes. Soon, HEMT performance will be limited by the crystalline quality of the epistructure. MBE offers heterostructure growth with highly abrupt interfaces, low point defect concentrations, and very low carbon and hydrogen impurity concentrations. Minimizing parasitic leakage pathways and resistances is essential in the growth of HEMTs for high-frequency and high-power applications. Through growth on native substrates with very low threading dislocation density, low-leakage HEMTs with very low on-resistance can be realized. Ga-rich plasma-assisted MBE (PAMBE) has been studied extensively, and it is clear that this technique has inherent limitations, including a high density of leakage pathways and a very small growth parameter space. Relatively new MBE growth techniques-high-temperature N-rich PAMBE and ammonia-based MBE-are being developed to circumvent the shortcomings of Ga-rich PAMBE.

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Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Lumbantoruan

Wong

Huang

et al. 2017

Journal of Elec Materi

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Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

Cited by 6 publications

References 18 publications

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Molecular beam epitaxy for high-performance Ga-face GaN electron devices

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

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