Effect of neutron irradiation on the structural, electrical and optical properties evolution of RPLD VO2 films

Madiba, I.G.; Émond, Nicolas; Chaker, Mohamed; Khanyile, B.S.; Tadadjeu, Sokeng Ifriky; Zolliker, Peter; Izerrouken, M.; Matinise, N.; Braun, Artur; Nkosi, M.; Mâaza, M.

doi:10.1016/j.nimb.2019.01.039

Cited by 10 publications

(3 citation statements)

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“…In order to more clearly reflect the phase transition temperature of the sample, d(R)/d T curves for the samples of S 2-1 , S 2-2 , S 2-3 and S 2-4 were presented, respectively. According to the resistance-temperature curves of the samples in the S 2 group, the phase transition temperatures of all VO 2 /6H-SiC films were in the range of 69–70 °C, which is consistent with the previous report by Zhou, et al [28]. The reason for the higher phase transition temperature of the sample is the slight lattice mismatch between the VO 2 films and 6H-SiC substrates.…”

Section: Resultssupporting

confidence: 89%

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Cheng

Gao

et al. 2019

Nanomaterials

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For growing high quality epitaxial VO2 thin films, the substrate with suitable lattice parameters is very important if considering the lattice matching. In addition, the thermal conductivity between the substrate and epitaxial film should be also considered. Interestingly, the c-plane of hexagonal 6H-SiC with high thermal conductivity has a similar lattice structure to the VO2 (010), which enables epitaxial growth of high quality VO2 films on 6H-SiC substrates. In the current study, we deposited VO2 thin films directly on 6H-SiC (0001) single-crystal substrates by pulsed laser deposition (PLD) and systematically investigated the crystal structures and surface morphologies of the films as the function of growth temperature and film thickness. With optimized conditions, the obtained epitaxial VO2 film showed pure monoclinic phase structure and excellent phase transition properties. Across the phase transition from monoclinic structure (M1) to tetragonal rutile structure (R), the VO2/6H-SiC (0001) film demonstrated a sharp resistance change up to five orders of magnitude and a narrow hysteresis width of only 3.3 °C.

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Section: Resultssupporting

confidence: 89%

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Cheng

Gao

et al. 2019

Nanomaterials

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“…Neutron irradiation has been shown to decrease the electrical conductivity of the M1 phase of VO 2 , which is attributed to irradiation‐induced creation of defects and expansion of the lattice. [ 170 ] In epitaxial VO 2 thin films, proton irradiation systematically increases the electrical conductivity of the M1 phase with increasing ion fluence while decreasing T eq . [ 171 ] Alpha‐particle (He 2+ ) irradiation has been shown to decrease T eq.…”

Section: Thin Films Of Vo2 and Their Potential For Applications In Ne...mentioning

confidence: 99%

Harnessing the Metal–Insulator Transition of VO₂ in Neuromorphic Computing

et al. 2022

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Future‐generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high‐fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near‐room‐temperature, discontinuous, and hysteretic metal–insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site‐selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy‐efficient computation to manifest intelligence.

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“…The carrier mobility of implanted films suggests an increase in the work function (Wf) parameter. The work function of metal oxides and semiconductors increases with their average state of inhomogeneous defects and deformation accumulated [44,45]. Phase transition characteristics of the VO2 films were evaluated by measuring temperaturedependent resistivity at temperature ranging from 270K to 380K for the cooling and heating processes as illustrated in Fig.…”

Section: Electrical Properties Of Vo2: Mgmentioning

confidence: 99%

Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation

Mabakachaba

Madiba

Kennedy

et al. 2020

Surfaces and Interfaces

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Effect of neutron irradiation on the structural, electrical and optical properties evolution of RPLD VO2 films

Cited by 10 publications

References 50 publications

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Harnessing the Metal–Insulator Transition of VO₂ in Neuromorphic Computing

Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation

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Effect of neutron irradiation on the structural, electrical and optical properties evolution of RPLD VO2 films

Cited by 10 publications

References 50 publications

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Harnessing the Metal–Insulator Transition of VO2 in Neuromorphic Computing

Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation

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Product

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Harnessing the Metal–Insulator Transition of VO₂ in Neuromorphic Computing