Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation

Mabakachaba, B.; Madiba, I.G.; Kennedy, J.; Kaviyarasu, K.; Ngoupe, P.; Khanyile, B.S.; Rensburg, J. Janse van; Ezema, Fabian I.; Arendse, Christopher J.; Mâaza, M.

doi:10.1016/j.surfin.2020.100590

Cited by 8 publications

(4 citation statements)

References 44 publications

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“…1. Schematic describing literature values for the irradiation of VO 2 either for ion implantation (C + , 17 O + , [18][19][20] Cs + , 21 B + , 22 P + , 22 W + , 23,24 Mg + , 17,25 Er 3+ , 26 Au + , 27 Ga +28 ) or for ion irradiation (with largely non-reactive particles, including 4 He +17 /He + , 29 H + , 30 Ar + , 21,31 ). Lines connect the data points from a single study at a common acceleration voltage.…”

Section: Introductionmentioning

confidence: 99%

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Gurrola,

Cain,

et al. 2024

Journal of Applied Physics

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Vanadium dioxide (VO2) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO2, as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO2 films subject to different 10 keV helium ion (He+) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO2/Si vs single crystal Al2O3). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

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Section: Introductionmentioning

confidence: 99%

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Gurrola,

Cain,

et al. 2024

Journal of Applied Physics

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“…Among the numerous metal oxides, vanadium oxide (VO 2 ) stood out for its excellent optical [1], electrical [2], and magnetic [3] properties. In recent decades, VO 2 has attracted the attention of academics due to its unique properties [4], resulting in its widespread application in numerous energy-saving industries.…”

Section: Introductionmentioning

confidence: 99%

Effect of W-Mo doping on the phase transition temperature of VO₂ synthesized by hydrothermal microwave method

Liu

Jiang

et al. 2023

Mater. Res. Express

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In this study, the combination of hydrothermal microwave technology and high-temperature method was used to efficiently control the formation of M-phase vanadium dioxide (VO2) nanoparticles, which were promising materials for optoelectronic switches and smart windows due to their excellent optoelectronic properties during the phase transition. The phase state and structure of VO2 depended on its synthesis parameters, and the results showed that the optimal conditions for VO2(B) synthesis in a hydrothermal microwave were 120 ℃ for 2 h, which was a novel method for efficiently preparing VO2(B) at a low temperature. By vacuum annealing, VO2(B) could be transformed into monoclinic VO2(R), where VO2(R) converts into VO2(M) on cooling to room temperature. Furthermore, the phase transition temperature of W-Mo co-doped VO2(M) decreased by 14.8 °C, showing that the incorporation of W-Mo elements into the VO2-based structure affects the material's phase transition temperature.

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“…A variety of methods, including hydrothermal synthesis with an autoclave at a high pressure [10], chemical vapor deposition (CVD) [11], sputtering [12,13], and ion implantation [14], have been utilized to synthesize W x VO 2 (M). However, these methods require complicated experimental parameter controls or special devices, thereby restricting the extension of these methods to large-scale production at a low cost.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the MIT temperature of pristine VO2 is decreased, making WxVO2 (M) an ideal candidate for thermochromic window materials as it can reflect NIR at room temperature while transmitting visible light [8,9]. A variety of methods, including hydrothermal synthesis with an autoclave at a high pressure [10], chemical vapor deposition (CVD) [11], sputtering [12,13], and ion implantation [14], have been utilized to synthesize WxVO2 (M). However, these methods require complicated experimental parameter controls or special devices, thereby restricting the extension of these methods to largescale production at a low cost.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Tungsten-Doped Vanadium Dioxide Using a Modified Polyol Method Involving 1-Dodecanol

Lee

Jung

Park³

et al. 2020

Materials

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The doping of tungsten into VO2 (M) via a polyol process that is based on oligomerization of ammonium metavanadate and ethylene glycol (EG) to synthesize a vanadyl ethylene glycolate (VEG) followed by postcalcination was carried out by simply adding 1-dodecanol and the tungsten source tungstenoxytetrachloride (WOCl4). Tungsten-doped VEGs (W-VEGs) and their calcinated compounds (WxVO2) were prepared with varying mixing ratios of EG to 1-dodecanol and WOCl4 concentrations. Characterizations of W-VEGs by powder X-ray diffraction, differential scanning calorimetry, scanning electron microscopy, and infrared and transmittance spectroscopy showed that tungsten elements were successfully doped into WxVO2, thereby decreasing the metal-insulator transition temperature from 68 down to 51 °C. Our results suggested that WOCl4 variously combined with 1-dodecanol might interrupt the linear growth of W-VEGs, but that such an interruption might be alleviated at the optimal 1:1 mixing ratio of EG to 1-dodecanol, resulting in the successful W doping. The difference in the solar modulations of a W0.0207VO2 dispersion measured at 20 and 70 °C was increased to 21.8% while that of a pure VO2 dispersion was 2.5%. It was suggested that WOCl4 coupled with both EG and 1-dodecanol at an optimal mixing ratio could improve the formation of W-VEG and WxVO2 and that the bulky dodecyl chains might act as defects to decrease crystallinity.

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Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation

Cited by 8 publications

References 44 publications

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Effect of W-Mo doping on the phase transition temperature of VO₂ synthesized by hydrothermal microwave method

Synthesis of Tungsten-Doped Vanadium Dioxide Using a Modified Polyol Method Involving 1-Dodecanol

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Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation

Cited by 8 publications

References 44 publications

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Effect of W-Mo doping on the phase transition temperature of VO2 synthesized by hydrothermal microwave method

Synthesis of Tungsten-Doped Vanadium Dioxide Using a Modified Polyol Method Involving 1-Dodecanol

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Effect of W-Mo doping on the phase transition temperature of VO₂ synthesized by hydrothermal microwave method