Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV&lt;sup&gt;&lt;/sup&gt;-Photodiodes

Afanasyev, Alexey V.; Ilyin, Vladimir; Лучинин, В. В.; Reshanov, Sergey A.; Schöner, Adolf; Sergushichev, K. A.; Smimov, A. A.

doi:10.4028/www.scientific.net/msf.897.614

Cited by 5 publications

(1 citation statement)

References 8 publications

(9 reference statements)

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“…Afanasyev, et al, [37] examined the photosensitivity of SiC UV photodiodes and observed no change in performance after a fast-neutron fluence of 5 x 10 12 cm -2 but observed reduction of the photosensitivity of their devices at higher fluences up to 1 x 10 14 cm -2 .…”

Section: Detectorsmentioning

confidence: 99%

Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments

Ruddy¹,

Ottaviani

Lyoussi

et al. 2021

EPJ Web Conf.

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Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantlingdecommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high-radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.

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Section: Detectorsmentioning

confidence: 99%

Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments

Ruddy¹,

Ottaviani

Lyoussi

et al. 2021

EPJ Web Conf.

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Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

Zhuraev

Yusupov

Gulyamov

et al. 2020

J Eng Phys Thermophy

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Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art

Ruddy¹,

Ottaviani

Lyoussi

et al. 2022

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or "hot" dismantling-decommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, highradiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.

show abstract

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV<sup></sup>-Photodiodes

Cited by 5 publications

References 8 publications

Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments

Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments

Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art

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