Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

Zhuraev, Kh. N.; Yusupov, A. A.; Gulyamov, A. G.; Khazhiev, M. U.; Saidov, D.; Adilov, N. B.

doi:10.1007/s10891-020-02205-5

Cited by 1 publication

(1 citation statement)

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“…Aluminum atoms had a relatively shallow ionization energy (Ea≈200 meV) and were commonly used to obtain p-type conductivity in 4H-SiC [127,128]. However, the stability of Al in p-type silicon carbide has been a difficult problem all the time.…”

Section: Aluminum Dopingmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

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Section: Aluminum Dopingmentioning

confidence: 99%