2008
DOI: 10.1016/j.infrared.2007.07.005
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Effect of Nb doping on pyroelectric property of lead zirconate titanate films prepared by chemical solution deposition

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Cited by 8 publications
(3 citation statements)
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“…3, and the detailed ferroelectric parameters of PNZT films with PLCT seed layers of different thickness are shown in Table I. From Table I, for the PNZT thin film without seed layer, the coercive field ( E c ) is about 106 kV/cm, and the remnant polarization ( P r ) is about 45 μC/cm 2 , this value is very similar to those of PNZT films reported by most researchers 19,20 . The PNZT thin film with 5‐nM‐thick PLCT seed layer shows higher remnant polarization ( P r =60 μC/cm 2 ) and lower coercive field ( E c =51 kV/cm).…”
Section: Resultssupporting
confidence: 72%
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“…3, and the detailed ferroelectric parameters of PNZT films with PLCT seed layers of different thickness are shown in Table I. From Table I, for the PNZT thin film without seed layer, the coercive field ( E c ) is about 106 kV/cm, and the remnant polarization ( P r ) is about 45 μC/cm 2 , this value is very similar to those of PNZT films reported by most researchers 19,20 . The PNZT thin film with 5‐nM‐thick PLCT seed layer shows higher remnant polarization ( P r =60 μC/cm 2 ) and lower coercive field ( E c =51 kV/cm).…”
Section: Resultssupporting
confidence: 72%
“…From Table I, for the PNZT thin film without seed layer, the coercive field (E c ) is about 106 kV/ cm, and the remnant polarization (P r ) is about 45 mC/cm 2 , this value is very similar to those of PNZT films reported by most researchers. 19,20 The PNZT thin film with 5-nM-thick PLCT seed layer shows higher remnant polarization (P r 5 60 mC/cm 2 ) and lower coercive field (E c 5 51 kV/cm). When the thickness of PLCT seed layer increases to 10 nM, the saturated polarization of the PNZT film is obviously increased, and the remnant polarizations obtained from the hysteresis loop is about 47 mC/ cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…One of the most used additives is niobium which substitutes either Zr 4+ or Ti 4+ , promotes the lead vacancies, and is considered as a donor dopant. Most of the studies have reported on the effect of niobium modification on the dielectric, piezoelectric, pyroelectric, and electrooptic properties of PZT in bulk as well as thin film form [18][19][20][21][22][23][24][25]. However, there are so many reports that due to lead evaporation during processing, both doped and undoped PZT, are seldom observed to be perfect [26][27][28].…”
Section: Introductionmentioning
confidence: 99%