Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen

Othman, Maisara; Ritikos, Richard; Khanis, Noor Hamizah; Rashid, Nur Maisarah Abdul; Gani, Siti Meriam Ab.; Rahman, Saadah Abdul

doi:10.1016/j.tsf.2012.03.090

Cited by 9 publications

(3 citation statements)

References 32 publications

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“…Compared to our previous work using CH 4 gas, thin films deposited using C 2 H 6 in this work showed higher deposition rate. This result is not in agreement with other work (Othman et al 2013) which used relatively low RF power density (1.2 W/cm3). Using the C 2 H 6 the dissociation of precursor gases had to undergo an additional step to form the CH 3 radical step (Haviar et al 2014).…”

Section: Surface Morphologycontrasting

confidence: 99%

“…Continuation of the work, the sensitivity a-CN x thin films as a humidity sensor, produced from ethane (C 2 H 6 ) gas is studied. Higher C to H ratio in C 2 H 6 gas is expected to induce the nitrogen incorporations in the films (Othman et al 2014) and promote the formation of paracyanogen (C=N) and nitrile (C≡N) bands (Othman et al 2013). Higher content of these bands can enhance the humidity sensing property of a-CN x thin films (Lee & Lee 2015).…”

Section: Introductionmentioning

confidence: 99%

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Effect of Radio Frequency Power on a-CNx Film Properties and Its Performance as Humidity Sensors

Awang¹,

Purhanudin

Salman

2018

JSM

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A series of amorphous carbon nitride (a-CN x) thin films were deposited on silicon (111) substrates using a home-built radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system. The a-CN x thin films were deposited from a mixture of a fixed flow-rate of ethane (C 2 H 6 , 20 sccm) and nitrogen (N 2 , 47 sccm) gases with varying RF power. A higher ratio of C to H (C to H ratio is 1:3) atoms in C 2 H 6 as compared to the ratio in methane (CH 4) gas (C to H ratio is 1:4) is expected to produce an interesting effect to the film properties as humidity sensor. The characterization techniques used to determine the morphology and chemical bonding of the thin films are field emission scanning electron microscopy (FESEM) and Fourier transform infrared spectroscopy (FTIR), respectively. The variation of morphology and the existence of nitrile band in these samples are correlated with the electrical properties of a-CN x thin films. Using humidity sensing system, the sensing performance of the samples was examined. It was found that the response of sensors towards the percentage of relative humidity (% RH) change is good resistive responses and good repeatability. The sensitivity of the prepared a-CN x thin films is significantly higher (up to 79%) as compared to previous studies using CH 4 or acetylene as precursor gas. Based on these results, the properties and the sensitivity of the a-CN x thin films towards humidity can be tailored by using an appropriate precursor gases and deposition parameters.

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Section: Surface Morphologycontrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Radio Frequency Power on a-CNx Film Properties and Its Performance as Humidity Sensors

Awang¹,

Purhanudin

Salman

2018

JSM

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“…and CH 2 + are directly incorporated into the film and contribute to its growth. 23 Further increase in the carbon flow showed steady increases in C concentration, reaching 43% for the most C rich sample in this study. Not surprisingly, Si and N concentrations decreased by 14 and 16 at%, respectively for the thin films deposited with the C 2 H 2 precursor at partial pressures of 0.07 to 0.2 mTorr.…”

Section: Resultssupporting

confidence: 48%

A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane

Abdelal

Khatami

Mascher

2023

ECS J. Solid State Sci. Technol.

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We present a comparative study of the properties of amorphous hydrogenated silicon carbonitride (SiCN:H) thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. The elemental composition, growth rate, density, and refractive index values of the SiCN:H thin films were analyzed as functions of flow rates of pure acetylene and methane hydrocarbon precursors. The mechanical properties were studied with nanoindentation measurements to compare hardness and Young’s modulus of the SiCN:H thin films deposited with different carbon sources. Variable angle spectroscopic ellipsometry, elastic recoil detection, and Rutherford backscattering spectrometry were used to determine thin film properties. Higher carbon content in the thin films was achieved by acetylene compared to methane at the same flow rate due to its lower ionization energy during the deposition. Infrared absorption spectra of the thin films deposited with acetylene precursor were analyzed to determine the correlation between the hydrocarbon flow rate and the intra-molecular bond intensities in the thin films. We found that the significant contribution to the decreased hardness comes from hydrogen in the SiCN matrix, which makes the films less dense.

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Electrical Properties of Amorphous Carbon Nitride Thin Films for Pressure Sensor Applications

Aono

Tamura

2017

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Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen

Cited by 9 publications

References 32 publications

Effect of Radio Frequency Power on a-CNx Film Properties and Its Performance as Humidity Sensors

Effect of Radio Frequency Power on a-CNx Film Properties and Its Performance as Humidity Sensors

A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane

Electrical Properties of Amorphous Carbon Nitride Thin Films for Pressure Sensor Applications

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